Part Details for IRFH7110TRPBF by Infineon Technologies AG
Overview of IRFH7110TRPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IRFH7110TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IRFH7110 - 100V Single N-Channel HEXFET Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 1940 |
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$0.4641 / $0.5460 | Buy Now |
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DISTI #
IRFH7110TRPBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 11A, 3.6W, PQFN5X6 Min Qty: 4000 | 0 |
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$0.8100 | RFQ |
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DISTI #
2148086
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Farnell | MOSFET N CH 100V, 11A, PQFN 5X6 RoHS: Compliant Min Qty: 1 Lead time: 11 Weeks, 1 Days Container: Each | 0 |
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$0.5876 / $0.6489 | Buy Now |
Part Details for IRFH7110TRPBF
IRFH7110TRPBF CAD Models
IRFH7110TRPBF Part Data Attributes
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IRFH7110TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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IRFH7110TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, E, QFN-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 110 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.0135 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 104 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFH7110TRPBF
This table gives cross-reference parts and alternative options found for IRFH7110TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFH7110TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFH7110TR2PBF | Power Field-Effect Transistor, 11A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, E, QFN-8 | International Rectifier | IRFH7110TRPBF vs IRFH7110TR2PBF |
| IRFH7110TRPBF | Power Field-Effect Transistor, 11A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, E, QFN-8 | International Rectifier | IRFH7110TRPBF vs IRFH7110TRPBF |