Part Details for IRFH7185TRPBF by Infineon Technologies AG
Results Overview of IRFH7185TRPBF by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
IRFH7185TRPBF Information
IRFH7185TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFH7185TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70394808
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RS | IRFH7185TRPBF N-CHANNEL MOSFET TRANSISTOR, 123 A, 100 V, 8-PIN PQFN Min Qty: 4000 Package Multiple: 1 Container: Bulk | 0 |
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$1.2900 | RFQ |
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Chip Stock | 100VSingleN-ChannelHEXFETPowerMOSFETinaPQFN5x6package,PG-TDSON-8,RoHS | 14400 |
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RFQ |
Part Details for IRFH7185TRPBF
IRFH7185TRPBF CAD Models
IRFH7185TRPBF Part Data Attributes
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IRFH7185TRPBF
Infineon Technologies AG
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Datasheet
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IRFH7185TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 19A I(D), 100V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, QFN-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-N5 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 360 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 19 A | |
| Drain-source On Resistance-Max | 0.0052 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N5 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 260 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRFH7185TRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFH7185TRPBF is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to implement adequate cooling mechanisms to keep the junction temperature within the specified range.
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A recommended PCB layout for minimizing EMI includes using a solid ground plane, keeping the power and ground traces short and wide, and using shielding and filtering components as necessary.
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Yes, the IRFH7185TRPBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to follow the recommended layout and design guidelines to minimize parasitic inductance and capacitance.
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To protect the IRFH7185TRPBF, implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits, and ensure that the device is operated within the recommended voltage and current ratings.