Part Details for IRFI640GPBF by Vishay Intertechnologies
Overview of IRFI640GPBF by Vishay Intertechnologies
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IRFI640GPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97K2005
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Newark | Mosfet Transistor, N Channel, 9.8 A, 200 V, 180 Mohm, 10 V, 4 V Rohs Compliant: Yes |Vishay IRFI640GPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 952 |
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$1.5300 / $2.1800 | Buy Now |
DISTI #
63J6771
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Newark | N Channel Mosfet, 200V, 9.8A, To-220Fp, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:9.8A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Vishay IRFI640GPBF RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
97K2005
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Avnet Americas | MOSFET N-CHANNEL 200V - Bulk (Alt: 97K2005) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 0 Days Container: Bulk | 37 Partner Stock |
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$1.5900 / $2.1800 | Buy Now |
DISTI #
IRFI640GPBF
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Avnet Americas | MOSFET N-CHANNEL 200V - Bulk (Alt: IRFI640GPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Bulk | 0 |
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$1.5939 | Buy Now |
DISTI #
844-IRFI640GPBF
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Mouser Electronics | MOSFETs TO220 200V 9.8A N-CH MOSFET RoHS: Compliant | 1298 |
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$1.5300 / $2.1300 | Buy Now |
DISTI #
70079036
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RS | MOSFET, Power, N-Ch, VDSS 200V, RDS(ON) 0.18Ohm, ID 9.8A, TO-220 Full-Pak, PD 40W | Vishay PCS IRFI640GPBF RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Container: Bulk | 0 |
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$1.8700 / $2.2000 | RFQ |
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Future Electronics | Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 18Tube |
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$1.0300 / $1.1700 | Buy Now |
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Future Electronics | Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.0300 / $1.1700 | Buy Now |
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Future Electronics | Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.0300 / $1.1400 | Buy Now |
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Bristol Electronics | 4400 |
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RFQ |
Part Details for IRFI640GPBF
IRFI640GPBF CAD Models
IRFI640GPBF Part Data Attributes
|
IRFI640GPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFI640GPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULLPACK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | TO-220AB | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 430 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 9.8 A | |
Drain-source On Resistance-Max | 0.18 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 40 W | |
Pulsed Drain Current-Max (IDM) | 39 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |