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Transistors / Power Field-Effect Transistors / IRFL110TRPBF-BE3
Datasheets
IRFL110TRPBF-BE3 by:

Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 3 PIN

Part Details for IRFL110TRPBF-BE3 by Vishay Intertechnologies

Overview of IRFL110TRPBF-BE3 by Vishay Intertechnologies

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Price & Stock for IRFL110TRPBF-BE3

Part # Distributor Description Stock Price Buy
DISTI # 80AH8946
Newark Mosfet, N-Ch, 100V, 1.5A, Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:1.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFL110TRPBF-BE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 1985
  • 1 $0.5340
$0.5340 Buy Now
DISTI # 78AH6358
Newark Mosfet, N-Ch, 100V, 1.5A, Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:1.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFL110TRPBF-BE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.7540
  • 4,000 $0.6770
  • 6,000 $0.6530
  • 10,000 $0.6390
$0.6390 / $0.7540 Buy Now
DISTI # IRFL110TRPBF-BE3
Avnet Americas Transistor MOSFET N-Channel 100V 1.5A 4-Pin SOT-223 - Tape and Reel (Alt: IRFL110TRPBF-BE3) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3392
  • 5,000 $0.3283
  • 10,000 $0.3175
  • 15,000 $0.3066
  • 20,000 $0.2947
  • 25,000 $0.2809
  • 250,000 $0.2670
$0.2670 / $0.3392 Buy Now
DISTI # 80AH8946
Avnet Americas Transistor MOSFET N-Channel 100V 1.5A 4-Pin SOT-223 - Product that comes on tape, but is not reeled (Alt: 80AH8946) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 1 Days Container: Ammo Pack 1985 Partner Stock
  • 1 $0.8940
$0.8940 Buy Now
DISTI # 78-IRFL110TRPBF-BE3
Mouser Electronics MOSFET 100V N-CH HEXFET RoHS: Compliant 50930
  • 1 $0.7500
  • 10 $0.6590
  • 100 $0.5650
$0.5650 / $0.7500 Buy Now
Future Electronics 100V,1.5A,540MOHM,SOT-223 - COO: TAIWAN RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.3150
  • 5,000 $0.3100
  • 7,500 $0.3050
  • 10,000 $0.3000
  • 12,500 $0.2950
$0.2950 / $0.3150 Buy Now
DISTI # IRFL110TRPBF-BE3
TTI MOSFET 100V N-CH HEXFET RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 57500
In Stock
  • 2,500 $0.3420
  • 5,000 $0.3240
  • 12,500 $0.3000
  • 25,000 $0.2940
$0.2940 / $0.3420 Buy Now
DISTI # IRFL110TRPBF-BE3
EBV Elektronik Transistor MOSFET N-Channel 100V 1.5A 4-Pin SOT-223 (Alt: IRFL110TRPBF-BE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRFL110TRPBF-BE3

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IRFL110TRPBF-BE3 Part Data Attributes:

Parametric Data
IRFL110TRPBF-BE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFL110TRPBF-BE3 Vishay Intertechnologies Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SOT-223, 3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks, 1 Day
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 150 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1.5 A
Drain-source On Resistance-Max 0.54 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 15 pF
JEDEC-95 Code TO-261AA
JESD-30 Code R-PSSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Pulsed Drain Current-Max (IDM) 12 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFL110TRPBF-BE3

This table gives cross-reference parts and alternative options found for IRFL110TRPBF-BE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL110TRPBF-BE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIHFL110TR-BE3 Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN Vishay Intertechnologies IRFL110TRPBF-BE3 vs SIHFL110TR-BE3

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