Datasheets
IRFL4105PBF by:

Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN

Part Details for IRFL4105PBF by International Rectifier

Overview of IRFL4105PBF by International Rectifier

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Applications Automotive

Price & Stock for IRFL4105PBF

Part # Distributor Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 3.7A I(D), 55V, 0.045OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-261AA 29
  • 1 $1.1550
  • 5 $0.9240
  • 23 $0.5775
$0.5775 / $1.1550 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 6
  • 1 $1.1500
  • 100 $0.8700
  • 1,000 $0.7500
$0.7500 / $1.1500 Buy Now

Part Details for IRFL4105PBF

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IRFL4105PBF Part Data Attributes

IRFL4105PBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRFL4105PBF International Rectifier Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-261AA
Package Description SOT-223, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 3.7 A
Drain-source On Resistance-Max 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PSSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 2.1 W
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFL4105PBF

This table gives cross-reference parts and alternative options found for IRFL4105PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL4105PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFL4105TRPBF Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-4 Infineon Technologies AG IRFL4105PBF vs IRFL4105TRPBF
IRFL4105TRPBF Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier IRFL4105PBF vs IRFL4105TRPBF
IRFL4105TR Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, Infineon Technologies AG IRFL4105PBF vs IRFL4105TR
Part Number Description Manufacturer Compare
IRFL4105TRPBF Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier IRFL4105PBF vs IRFL4105TRPBF
PHT8N06LT,135 N-channel TrenchMOS logic level FET SC-73 4-Pin NXP Semiconductors IRFL4105PBF vs PHT8N06LT,135
PHT11N06LT Power Field-Effect Transistor Nexperia IRFL4105PBF vs PHT11N06LT
PHT11N06LT TRANSISTOR 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-223, 4 PIN, FET General Purpose Power NXP Semiconductors IRFL4105PBF vs PHT11N06LT
934054590135 Power Field-Effect Transistor Nexperia IRFL4105PBF vs 934054590135
PHT11N06LT115 TRANSISTOR 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors IRFL4105PBF vs PHT11N06LT115
934054590135 TRANSISTOR 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors IRFL4105PBF vs 934054590135
PHT11N06T TRANSISTOR 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-4, FET General Purpose Power NXP Semiconductors IRFL4105PBF vs PHT11N06T
PHT8N06LT115 TRANSISTOR 3.5 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors IRFL4105PBF vs PHT8N06LT115
PHT11N06LT/T3 TRANSISTOR 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors IRFL4105PBF vs PHT11N06LT/T3

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