IRFL9014TR
Description: Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Overview of IRFL9014TR by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRFL9014TR by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   527
RFQ
Quest Components 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA 282
  • 1 $1.5000
  • 68 $0.7500
  • 268 $0.6000
$0.6000 / $1.5000 Buy Now

CAD Models for IRFL9014TR by International Rectifier
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Part Data Attributes for IRFL9014TR by International Rectifier

IRFL9014TR
International Rectifier
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Package Description
SOT-223, 3 PIN
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain-source On Resistance-Max
0.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-261AA
JESD-30 Code
R-PSSO-G3
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
2 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRFL9014TR
    International Rectifier
    Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
    VS

Alternate Parts for IRFL9014TR

This table gives cross-reference parts and alternative options found for IRFL9014TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL9014TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFL9014 Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier IRFL9014TR vs IRFL9014
IRFL9014PBF Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 International Rectifier IRFL9014TR vs IRFL9014PBF
Part Number Description Manufacturer Compare
IRFL9014 Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier IRFL9014TR vs IRFL9014
NDT2955 P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ, 4000-REEL onsemi IRFL9014TR vs NDT2955
BSP170PL6327 Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG IRFL9014TR vs BSP170PL6327
BSP170P Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4 Infineon Technologies AG IRFL9014TR vs BSP170P
IRFL9014PBF Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 International Rectifier IRFL9014TR vs IRFL9014PBF
NDT2955 Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation IRFL9014TR vs NDT2955
BSP613P Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN Infineon Technologies AG IRFL9014TR vs BSP613P
NDT2955 2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET Rochester Electronics LLC IRFL9014TR vs NDT2955
RFT1P06E Power Field-Effect Transistor, 1.4A I(D), 60V, 0.285ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation IRFL9014TR vs RFT1P06E

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