Datasheets
IRFM054D by:

Power Field-Effect Transistor, 35A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

Part Details for IRFM054D by Infineon Technologies AG

Overview of IRFM054D by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for IRFM054D

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IRFM054D Part Data Attributes

IRFM054D Infineon Technologies AG
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IRFM054D Infineon Technologies AG Power Field-Effect Transistor, 35A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 480 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA
JESD-30 Code R-MSFM-P3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 220 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFM054D

This table gives cross-reference parts and alternative options found for IRFM054D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFM054D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFM054-QR-BR1 35A, 60V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFM054D vs IRFM054-QR-BR1
SHD2181S Power Field-Effect Transistor, 45A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-5, 3 PIN Sensitron Semiconductors IRFM054D vs SHD2181S
SHD2181 Power Field-Effect Transistor, 45A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-5, 2 PIN Sensitron Semiconductors IRFM054D vs SHD2181
IRFM054-JQR-B 35A, 60V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFM054D vs IRFM054-JQR-B
IRFM054D Power Field-Effect Transistor, 35A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier IRFM054D vs IRFM054D
IRFM054 Power Field-Effect Transistor, 35A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN International Rectifier IRFM054D vs IRFM054
IRFM054-JQR-BR1 Power Field-Effect Transistor, 35A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors IRFM054D vs IRFM054-JQR-BR1
IRFM054-QR-B Power Field-Effect Transistor, 35A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors IRFM054D vs IRFM054-QR-B
SHD2181A Power Field-Effect Transistor, 45A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-5A, 2 PIN Sensitron Semiconductors IRFM054D vs SHD2181A
IRFM054 35A, 60V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFM054D vs IRFM054

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