Part Details for IRFM250-JQR-B by TT Electronics Power and Hybrid / Semelab Limited
Overview of IRFM250-JQR-B by TT Electronics Power and Hybrid / Semelab Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for IRFM250-JQR-B
IRFM250-JQR-B CAD Models
IRFM250-JQR-B Part Data Attributes
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IRFM250-JQR-B
TT Electronics Power and Hybrid / Semelab Limited
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Datasheet
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IRFM250-JQR-B
TT Electronics Power and Hybrid / Semelab Limited
27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SEMELAB LTD | |
| Part Package Code | TO-254AA | |
| Package Description | FLANGE MOUNT, S-MSFM-P3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 27.4 A | |
| Drain-source On Resistance-Max | 0.105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-254AA | |
| JESD-30 Code | S-MSFM-P3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | SQUARE | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFM250-JQR-B
This table gives cross-reference parts and alternative options found for IRFM250-JQR-B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFM250-JQR-B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| JANTX2N7225 | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | Omnirel Corp | IRFM250-JQR-B vs JANTX2N7225 |
| 2N7225 | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | Microsemi Corporation | IRFM250-JQR-B vs 2N7225 |
| NESM250 | Power Field-Effect Transistor, 27A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Microsemi Corporation | IRFM250-JQR-B vs NESM250 |
| IRFM250R1 | 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFM250-JQR-B vs IRFM250R1 |
| JANTXV2N7225 | 27.4A, 200V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | Intersil Corporation | IRFM250-JQR-B vs JANTXV2N7225 |
| 2N7225 | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN | Sensitron Semiconductors | IRFM250-JQR-B vs 2N7225 |
| 2N7225 | 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFM250-JQR-B vs 2N7225 |
| JANHCA2N7225 | Power Field-Effect Transistor, 27.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Infineon Technologies AG | IRFM250-JQR-B vs JANHCA2N7225 |
| JANTX2N7225 | Power Field-Effect Transistor, 27.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Voltage Multipliers Inc | IRFM250-JQR-B vs JANTX2N7225 |
| JAN2N7225 | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | Microsemi Corporation | IRFM250-JQR-B vs JAN2N7225 |