Part Details for IRFM350 by Infineon Technologies AG
Overview of IRFM350 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFM350
Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | Single N-Channel 400 V 150 W 110 nC Hexfet Power Mosfet Flange Mount - TO-254AA RoHS: Not Compliant pbFree: No Min Qty: 100 Package Multiple: 1 Container: Tray | 0Tray |
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$145.6600 / $152.9400 | Buy Now |
Part Details for IRFM350
IRFM350 CAD Models
IRFM350 Part Data Attributes
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IRFM350
Infineon Technologies AG
Buy Now
Datasheet
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IRFM350
Infineon Technologies AG
Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, S-MSFM-P3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 700 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 400 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.415 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-254AA | |
JESD-30 Code | S-MSFM-P3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | METAL | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 56 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFM350
This table gives cross-reference parts and alternative options found for IRFM350. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFM350, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFM350 | 14A, 400V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | TT Electronics Power and Hybrid / Semelab Limited | IRFM350 vs IRFM350 |
IRFM350-JQR-B | Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | TT Electronics Resistors | IRFM350 vs IRFM350-JQR-B |
JANTX2N7227 | Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | Semicoa Semiconductors | IRFM350 vs JANTX2N7227 |
IRFM350R1 | 14A, 400V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | TT Electronics Power and Hybrid / Semelab Limited | IRFM350 vs IRFM350R1 |
2N7227R1 | 14A, 400V, 0.315ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFM350 vs 2N7227R1 |
JANTV2N7227 | 14A, 400V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | Microsemi Corporation | IRFM350 vs JANTV2N7227 |
2N7227 | Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Temic Semiconductors | IRFM350 vs 2N7227 |
JANTXV2N7227 | 14A, 400V, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254AA, 3 PIN | Intersil Corporation | IRFM350 vs JANTXV2N7227 |
JANTX2N7227 | 14A, 400V, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254AA, 3 PIN | Intersil Corporation | IRFM350 vs JANTX2N7227 |
SCF2N7227T1 | Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | Semicoa Semiconductors | IRFM350 vs SCF2N7227T1 |