There are no models available for this part yet.
Overview of IRFN150SMD by TT Electronics Power and Hybrid / Semelab Limited
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
CAD Models for IRFN150SMD by TT Electronics Power and Hybrid / Semelab Limited
Part Data Attributes for IRFN150SMD by TT Electronics Power and Hybrid / Semelab Limited
|
|
---|---|
Pbfree Code
|
No
|
Rohs Code
|
No
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
SEMELAB LTD
|
Package Description
|
CHIP CARRIER, R-CBCC-N3
|
Pin Count
|
3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Avalanche Energy Rating (Eas)
|
150 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
100 V
|
Drain Current-Max (ID)
|
27 A
|
Drain-source On Resistance-Max
|
0.081 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-CBCC-N3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape
|
RECTANGULAR
|
Package Style
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM)
|
108 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Form
|
NO LEAD
|
Terminal Position
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IRFN150SMD
This table gives cross-reference parts and alternative options found for IRFN150SMD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFN150SMD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFN150SMD-JQR-B | 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFN150SMD vs IRFN150SMD-JQR-B |
IRFN150SMD | Power Field-Effect Transistor, 27A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Resistors | IRFN150SMD vs IRFN150SMD |
2N7224UPBF | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | International Rectifier | IRFN150SMD vs 2N7224UPBF |
2N7224U | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | IRFN150SMD vs 2N7224U |
IRFN150R4 | 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, TO-220SM, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFN150SMD vs IRFN150R4 |
IRFN150 | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | Infineon Technologies AG | IRFN150SMD vs IRFN150 |
2N7224U | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, SMD-1, U-PKG-3 | Microsemi Corporation | IRFN150SMD vs 2N7224U |
IRFN150SMDR4 | Power Field-Effect Transistor, 27A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Resistors | IRFN150SMD vs IRFN150SMDR4 |
JANTXV2N7224U | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, SMD-1, U-PKG-3 | Microsemi Corporation | IRFN150SMD vs JANTXV2N7224U |
IRFN150PBF | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | International Rectifier | IRFN150SMD vs IRFN150PBF |