Datasheets
IRFN250-JQR-BR4 by:

Power Field-Effect Transistor, 22A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for IRFN250-JQR-BR4 by TT Electronics Resistors

Overview of IRFN250-JQR-BR4 by TT Electronics Resistors

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Applications Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

Part Details for IRFN250-JQR-BR4

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IRFN250-JQR-BR4 Part Data Attributes

IRFN250-JQR-BR4 TT Electronics Resistors
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IRFN250-JQR-BR4 TT Electronics Resistors Power Field-Effect Transistor, 22A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TT ELECTRONICS PLC
Package Description UNCASED CHIP, R-XUUC-N3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUUC-N3
JESD-609 Code e4
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 88 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish GOLD
Terminal Form NO LEAD
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFN250-JQR-BR4

This table gives cross-reference parts and alternative options found for IRFN250-JQR-BR4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFN250-JQR-BR4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFN250-JQR-B 22A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRFN250-JQR-BR4 vs IRFN250-JQR-B
Part Number Description Manufacturer Compare
STFM250SLP Power Field-Effect Transistor, 27.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Microsemi Corporation IRFN250-JQR-BR4 vs STFM250SLP
JANTXV2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN International Rectifier IRFN250-JQR-BR4 vs JANTXV2N7225
IRFN240SMD Power Field-Effect Transistor, 13.9A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Resistors IRFN250-JQR-BR4 vs IRFN240SMD
2N7225U1 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Resistors IRFN250-JQR-BR4 vs 2N7225U1
2N7225U1-JQR-BR4 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFN250-JQR-BR4 vs 2N7225U1-JQR-BR4
2N7225D Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Infineon Technologies AG IRFN250-JQR-BR4 vs 2N7225D
IRFN250 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN International Rectifier IRFN250-JQR-BR4 vs IRFN250
IRFM250DR1 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, METAL PACKAGE-3 TT Electronics Resistors IRFN250-JQR-BR4 vs IRFM250DR1
JANTX2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Omnirel Corp IRFN250-JQR-BR4 vs JANTX2N7225
2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 Microsemi Corporation IRFN250-JQR-BR4 vs 2N7225

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