Transistors
IRFN9240R4
Description: 11A, 200V, 0.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-276AB, CERAMIC, SMD1, 3 PIN

Overview of IRFN9240R4 by TT Electronics Power and Hybrid / Semelab Limited

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Part Data Attributes for IRFN9240R4 by TT Electronics Power and Hybrid / Semelab Limited

IRFN9240R4
TT Electronics Power and Hybrid / Semelab Limited
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
SEMELAB LTD
Part Package Code
TO-276AB
Package Description
CHIP CARRIER, R-CBCC-N3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
500 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
11 A
Drain-source On Resistance-Max
0.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-276AB
JESD-30 Code
R-CBCC-N3
JESD-609 Code
e4
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER
Polarity/Channel Type
P-CHANNEL
Pulsed Drain Current-Max (IDM)
44 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
GOLD
Terminal Form
NO LEAD
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRFN9240R4
    TT Electronics Power and Hybrid / Semelab Limited
    11A, 200V, 0.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-276AB, CERAMIC, SMD1, 3 PIN
    VS

Alternate Parts for IRFN9240R4

This table gives cross-reference parts and alternative options found for IRFN9240R4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFN9240R4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFN9240R4 Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, CERAMIC, SMD1, 3 PIN TT Electronics Resistors IRFN9240R4 vs IRFN9240R4
IRFN9240PBF Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN International Rectifier IRFN9240R4 vs IRFN9240PBF
JAN2N7237U Power Field-Effect Transistor, 11A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB, TO-267AB, 3 PIN International Rectifier IRFN9240R4 vs JAN2N7237U
IRFN9240 Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, CERAMIC, SMD1, 3 PIN TT Electronics Resistors IRFN9240R4 vs IRFN9240
IRFN9240-JQR-B Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, CERAMIC, SMD1, 3 PIN TT Electronics Resistors IRFN9240R4 vs IRFN9240-JQR-B
IRFN9240-JQR-BR4 11A, 200V, 0.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-276AB, CERAMIC, SMD1, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFN9240R4 vs IRFN9240-JQR-BR4
JANTXV2N7237U Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB, Infineon Technologies AG IRFN9240R4 vs JANTXV2N7237U
Part Number Description Manufacturer Compare
STFM9240VX Power Field-Effect Transistor, 11A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Microsemi Corporation IRFN9240R4 vs STFM9240VX
IRFM9240R1 11A, 200V, 0.51ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFN9240R4 vs IRFM9240R1
2N7237DPBF Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier IRFN9240R4 vs 2N7237DPBF
STFM9240TP Power Field-Effect Transistor, 11A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Microsemi Corporation IRFN9240R4 vs STFM9240TP
2N7237R1 11A, 200V, 0.51ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFN9240R4 vs 2N7237R1
IRFM9240-JQR-B 11A, 200V, 0.51ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFN9240R4 vs IRFM9240-JQR-B
JANTXV2N7237 Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Infineon Technologies AG IRFN9240R4 vs JANTXV2N7237
2N7237R1 Power Field-Effect Transistor, 11A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors IRFN9240R4 vs 2N7237R1
IRFN9240PBF Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN International Rectifier IRFN9240R4 vs IRFN9240PBF
JANTXV2N7237 Power Field-Effect Transistor, 11A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Microsemi Corporation IRFN9240R4 vs JANTXV2N7237

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