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Part Details for IRFP054NPBF by Infineon Technologies AG
Results Overview of IRFP054NPBF by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFP054NPBF Information
IRFP054NPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFP054NPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
33X8380
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Newark | Mosfet Transistor, General Purpose, N Channel, 72 A, 55 V, 0.012 Ohm, 10 V, 4 V Rohs Compliant: Yes |Infineon IRFP054NPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 265 |
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$1.6400 / $2.9900 | Buy Now |
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DISTI #
IRFP054NPBF
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Avnet Americas | - Rail/Tube (Alt: IRFP054NPBF) COO: China RoHS: Compliant Min Qty: 800 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
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DISTI #
70017031
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RS | MOSFET, POWER, N-CH, VDSS 55V, RDS(ON) 0.012OHM, ID 81A, TO-247AC, PD 170W, VGS +/-20V Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$1.9800 / $2.2000 | RFQ |
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Rochester Electronics | IRFP054 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 4967 |
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$0.9362 / $1.5100 | Buy Now |
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DISTI #
IRFP054NPBF
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TME | Transistor: N-MOSFET, unipolar, 55V, 72A, 130W, TO247AC Min Qty: 1 | 284 |
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$1.4000 / $2.8400 | Buy Now |
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DISTI #
IRFP054NPBF
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Tube | 1411 |
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$0.8890 / $3.1600 | Buy Now |
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LCSC | 55V 81A 12m10V 170W 4V250uA 1 N-Channel TO-247AC Single FETs MOSFETs RoHS | 363 |
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$0.6753 / $1.2470 | Buy Now |
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DISTI #
IRFP054NPBF
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Maritex | MOSFET Devices, INFINEON, IRFP054NPBF, 55 V, 51 A, 20 V, 130 W Min Qty: 1 Package Multiple: 1 | 5148 |
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$1.0060 / $2.9160 | Buy Now |
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New Advantage Corporation | Single N-Channel 55 V 0.012 Ohm 130 nC HEXFET� Power Mosfet - TO-247AC RoHS: Compliant Min Qty: 1 Package Multiple: 400 | 400 |
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$2.1300 | Buy Now |
Part Details for IRFP054NPBF
IRFP054NPBF CAD Models
IRFP054NPBF Part Data Attributes
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IRFP054NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFP054NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 360 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 81 A | |
| Drain-source On Resistance-Max | 0.012 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 130 W | |
| Pulsed Drain Current-Max (IDM) | 290 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFP054NPBF
This table gives cross-reference parts and alternative options found for IRFP054NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP054NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| HUF75344G3 | onsemi | $2.6921 | N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ, TO-247-3, 450-TUBE | IRFP054NPBF vs HUF75344G3 |
| IRFP054N | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN | IRFP054NPBF vs IRFP054N |
| IRFP054N | International Rectifier | Check for Price | Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN | IRFP054NPBF vs IRFP054N |
| IRFP064PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | IRFP054NPBF vs IRFP064PBF |
| HUF75345G3 | Intersil Corporation | Check for Price | 75A, 55V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | IRFP054NPBF vs HUF75345G3 |
| HUF75343G3 | Intersil Corporation | Check for Price | 75A, 55V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | IRFP054NPBF vs HUF75343G3 |
| STW80NE06-10 | STMicroelectronics | Check for Price | 80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | IRFP054NPBF vs STW80NE06-10 |
| IRFP054PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | IRFP054NPBF vs IRFP054PBF |
| HUF75337G3 | Intersil Corporation | Check for Price | 75A, 55V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | IRFP054NPBF vs HUF75337G3 |
| HUF75337G3 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 62A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IRFP054NPBF vs HUF75337G3 |
IRFP054NPBF Frequently Asked Questions (FAQ)
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The SOA is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage ratings. Consult the application note AN201-05 from Infineon for guidance on SOA calculation.
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To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V. For turn-off, ensure the gate-source voltage is less than the threshold voltage (Vth) specified in the datasheet. Use a gate driver with a suitable voltage swing and rise/fall times to minimize switching losses.
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Follow the PCB layout guidelines in the datasheet and application notes from Infineon. Ensure good thermal conductivity by using a thermal pad or heat sink, and consider using thermal interface materials (TIMs) to reduce thermal resistance. Consult the Infineon application note AN201-06 for thermal management guidelines.
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The IRFP054NPBF is suitable for high-frequency switching applications up to several hundred kHz. However, consider the device's switching characteristics, such as rise and fall times, and ensure the gate driver and PCB layout are optimized for high-frequency operation.
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Use a voltage clamp or transient voltage suppressor (TVS) to protect the MOSFET from overvoltage conditions. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Consult the Infineon application note AN201-07 for protection circuit examples.