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Power Field-Effect Transistor, 195A I(D), 100V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19P2517
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Newark | N Channel Mosfet, 100V, 290A, To-247Ac, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:290A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Msl:- Rohs Compliant: Yes |Infineon IRFP4468PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 2320 |
|
$6.4000 / $8.9400 | Buy Now |
DISTI #
IRFP4468PBF-ND
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DigiKey | MOSFET N-CH 100V 195A TO247AC Min Qty: 1 Lead time: 12 Weeks Container: Tube |
737 In Stock |
|
$3.9050 / $8.5300 | Buy Now |
DISTI #
IRFP4468PBF
|
Avnet Americas | Trans MOSFET N-CH 100V 290A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRFP4468PBF) RoHS: Compliant Min Qty: 25 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube | 4000 |
|
$4.0934 | Buy Now |
DISTI #
19P2517
|
Avnet Americas | Trans MOSFET N-CH 100V 290A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: 19P2517) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 1948 Partner Stock |
|
$6.8500 / $8.9400 | Buy Now |
DISTI #
IRFP4468PBF
|
Avnet Americas | Trans MOSFET N-CH 100V 290A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRFP4468PBF) RoHS: Compliant Min Qty: 81 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 482 Partner Stock |
|
$3.9624 / $4.4616 | Buy Now |
DISTI #
942-IRFP4468PBF
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Mouser Electronics | MOSFETs MOSFT 100V 290A 2.6mOhm 360nC Qg RoHS: Compliant | 728 |
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$4.3000 / $8.0100 | Buy Now |
DISTI #
70017924
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RS | MOSFET, N Ch., 100V, 290A, 2.6 MOHM, 360 NC QG, TO-247AC, Pb-Free | Infineon IRFP4468PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$7.0300 / $8.2700 | RFQ |
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Future Electronics | Single N-Channel 100 V 2.6 mOhm 540 nC HEXFET® Power Mosfet - TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Container: Tube | 458Tube |
|
$3.5800 / $4.1800 | Buy Now |
|
Future Electronics | Single N-Channel 100 V 2.6 mOhm 540 nC HEXFET® Power Mosfet - TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 25 Lead time: 12 Weeks Container: Tube | 0Tube |
|
$3.5800 / $4.1800 | Buy Now |
|
Future Electronics | Single N-Channel 100 V 2.6 mOhm 540 nC HEXFET® Power Mosfet - TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 25 Lead time: 12 Weeks Container: Tube | 0Tube |
|
$3.5800 / $3.9700 | Buy Now |
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IRFP4468PBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRFP4468PBF
Infineon Technologies AG
Power Field-Effect Transistor, 195A I(D), 100V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 740 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 195 A | |
Drain-source On Resistance-Max | 0.0026 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 520 W | |
Pulsed Drain Current-Max (IDM) | 1120 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |