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Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFP450PBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
84AC1796
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Newark | Mosfet N-Channel 500V Rohs Compliant: No |Vishay IRFP450PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 7742 |
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$2.7800 / $3.9500 | Buy Now |
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DISTI #
63J6887
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Newark | N Channel Mosfet, 500V, 14A, To-247, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:14A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Msl:- Rohs Compliant: Yes |Vishay IRFP450PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 487 |
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$2.9900 / $3.9500 | Buy Now |
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DISTI #
IRFP450PBF
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Avnet Americas | - Bulk (Alt: IRFP450PBF) COO: China RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 7742 |
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$1.2985 | Buy Now |
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DISTI #
63J6887
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Avnet Americas | - Bulk (Alt: 63J6887) COO: China RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 487 Partner Stock |
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$2.9700 / $3.8700 | Buy Now |
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DISTI #
70078941
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RS | MOSFET, POWER, N-CH, VDSS 500V, RDS(ON) 0.4OHM, ID 14A, TO-247AC, PD 190W, VGS +/-20V Min Qty: 1 Package Multiple: 1 Lead time: 3 Weeks, 0 Days Container: Bulk | 393 |
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$1.9400 | Buy Now |
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Bristol Electronics | 286 |
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RFQ | ||
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DISTI #
IRFP450PBF
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TME | Transistor: N-MOSFET, unipolar, 500V, 8.7A, 190W, TO247AC Min Qty: 1 | 733 |
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$1.2800 / $2.9600 | Buy Now |
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DISTI #
IRFP450PBF
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Avnet Asia | (Alt: IRFP450PBF) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks, 0 Days | 0 |
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RFQ | |
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Chip Stock | Transistor:N-MOSFET, unipolar, 500V, 14A, 0.38ohm, 190W, -65+150deg.C, THT, TO247 | 101600 |
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RFQ | |
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DISTI #
IRFP450PBF
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EBV Elektronik | (Alt: IRFP450PBF) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 9 Weeks, 0 Days | EBV - 3200 |
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Buy Now |
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IRFP450PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFP450PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 760 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 180 W | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFP450PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP450PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFP450 | Philips Semiconductors | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | IRFP450PBF vs IRFP450 |
| IRFP450 | FCI Semiconductor | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRFP450PBF vs IRFP450 |
| IRFP450 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN | IRFP450PBF vs IRFP450 |
| IRFP450 | Thomson Consumer Electronics | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRFP450PBF vs IRFP450 |
The maximum safe operating area (SOA) for the IRFP450PBF is typically defined by the manufacturer as the region where the device can operate safely without damage. This information is usually provided in the datasheet or in a separate application note. For the IRFP450PBF, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id) ratings.
To ensure proper thermal management of the IRFP450PBF, it's essential to provide a good thermal path from the device to a heat sink or other cooling mechanism. This can be achieved by applying a thermal interface material (TIM) to the device, using a heat sink with a high thermal conductivity, and ensuring good airflow around the device.
The recommended gate drive voltage for the IRFP450PBF is typically between 10V to 15V, depending on the specific application and required switching speed. A higher gate drive voltage can result in faster switching times, but may also increase power consumption and electromagnetic interference (EMI).
To protect the IRFP450PBF from electrostatic discharge (ESD), it's essential to handle the device by the body or use an anti-static wrist strap or mat. The device should also be stored in an anti-static bag or tube, and all equipment used to handle the device should be grounded.
The maximum allowed drain-source voltage (Vds) for the IRFP450PBF is 500V. Exceeding this voltage can result in device damage or failure.