Part Details for IRFR110TR by International Rectifier
Overview of IRFR110TR by International Rectifier
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFR110TR
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2605 |
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RFQ | ||
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Bristol Electronics | Min Qty: 7 | 1020 |
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$0.2100 / $0.7500 | Buy Now |
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Quest Components | 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | 4100 |
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$0.1875 / $0.4500 | Buy Now |
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Quest Components | 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | 2084 |
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$0.3000 / $0.7500 | Buy Now |
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Quest Components | 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | 816 |
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$0.2600 / $1.0000 | Buy Now |
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Quest Components | 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | 1600 |
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$1.1550 / $3.0800 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 19 |
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$0.5000 / $0.7700 | Buy Now |
Part Details for IRFR110TR
IRFR110TR CAD Models
IRFR110TR Part Data Attributes:
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IRFR110TR
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFR110TR
International Rectifier
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 4.3 A | |
Drain-source On Resistance-Max | 0.54 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 25 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFR110TR
This table gives cross-reference parts and alternative options found for IRFR110TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR110TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFR110PBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR110TR vs IRFR110PBF |
IRFR110TRRPBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR110TR vs IRFR110TRRPBF |
IRFR110PBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | IRFR110TR vs IRFR110PBF |
IRFR110PBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Vishay Siliconix | IRFR110TR vs IRFR110PBF |
IRFR110 | Power Field-Effect Transistor, 4.7A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | IRFR110TR vs IRFR110 |
IRFR110 | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Vishay Intertechnologies | IRFR110TR vs IRFR110 |
IRFR110 | Power Field-Effect Transistor, 4.7A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | IRFR110TR vs IRFR110 |
SIHFR110TR-GE3 | TRANSISTOR 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR110TR vs SIHFR110TR-GE3 |
IRFR110TRLPBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | IRFR110TR vs IRFR110TRLPBF |
IRFR110TRPBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR110TR vs IRFR110TRPBF |