Datasheets
IRFR110TR by:

Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Details for IRFR110TR by International Rectifier

Overview of IRFR110TR by International Rectifier

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRFR110TR

Part # Distributor Description Stock Price Buy
Bristol Electronics   2605
RFQ
Bristol Electronics   Min Qty: 7 1020
  • 7 $0.7500
  • 28 $0.4875
  • 104 $0.2812
  • 357 $0.2400
  • 772 $0.2100
$0.2100 / $0.7500 Buy Now
Quest Components 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 4100
  • 1 $0.4500
  • 201 $0.2100
  • 953 $0.1875
$0.1875 / $0.4500 Buy Now
Quest Components 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 2084
  • 1 $0.7500
  • 134 $0.3750
  • 534 $0.3000
$0.3000 / $0.7500 Buy Now
Quest Components 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 816
  • 1 $1.0000
  • 121 $0.3000
  • 668 $0.2600
$0.2600 / $1.0000 Buy Now
Quest Components 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 1600
  • 1 $3.0800
  • 422 $1.2705
  • 788 $1.1550
$1.1550 / $3.0800 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 19
  • 1 $0.7700
  • 100 $0.5800
  • 1,000 $0.5000
$0.5000 / $0.7700 Buy Now

Part Details for IRFR110TR

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IRFR110TR Part Data Attributes:

IRFR110TR International Rectifier
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IRFR110TR International Rectifier Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 4.3 A
Drain-source On Resistance-Max 0.54 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 25 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR110TR

This table gives cross-reference parts and alternative options found for IRFR110TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR110TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR110PBF Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR110TR vs IRFR110PBF
IRFR110TRRPBF Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR110TR vs IRFR110TRRPBF
IRFR110PBF Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR110TR vs IRFR110PBF
IRFR110PBF Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Vishay Siliconix IRFR110TR vs IRFR110PBF
IRFR110 Power Field-Effect Transistor, 4.7A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR110TR vs IRFR110
IRFR110 Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRFR110TR vs IRFR110
IRFR110 Power Field-Effect Transistor, 4.7A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation IRFR110TR vs IRFR110
SIHFR110TR-GE3 TRANSISTOR 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR110TR vs SIHFR110TR-GE3
IRFR110TRLPBF Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR110TR vs IRFR110TRLPBF
IRFR110TRPBF Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR110TR vs IRFR110TRPBF
Part Number Description Manufacturer Compare
IRFR110TRLPBF Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR110TR vs IRFR110TRLPBF
IRFR110TRR Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR110TR vs IRFR110TRR
SIHFR110TR-GE3 TRANSISTOR 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR110TR vs SIHFR110TR-GE3
IRFR110PBF Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR110TR vs IRFR110PBF
IRFR110TRPBF Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Vishay Siliconix IRFR110TR vs IRFR110TRPBF
IRFR110 Power Field-Effect Transistor, 4.7A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR110TR vs IRFR110
IRFR110 Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRFR110TR vs IRFR110
IRFR110TRPBF Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR110TR vs IRFR110TRPBF
IRFR110PBF Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR110TR vs IRFR110PBF
IRFR110PBF Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Vishay Siliconix IRFR110TR vs IRFR110PBF

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