There are no models available for this part yet.
Overview of IRFR120 by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
CAD Models for IRFR120 by Samsung Semiconductor
Part Data Attributes for IRFR120 by Samsung Semiconductor
|
|
---|---|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
SAMSUNG SEMICONDUCTOR INC
|
Package Description
|
DPAK-3
|
Pin Count
|
3
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Avalanche Energy Rating (Eas)
|
30 mJ
|
Configuration
|
SINGLE
|
DS Breakdown Voltage-Min
|
100 V
|
Drain Current-Max (ID)
|
8.4 A
|
Drain-source On Resistance-Max
|
0.27 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-PSSO-G2
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation Ambient-Max
|
42 W
|
Power Dissipation-Max (Abs)
|
42 W
|
Pulsed Drain Current-Max (IDM)
|
34 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Max (toff)
|
59 ns
|
Turn-on Time-Max (ton)
|
58 ns
|
Alternate Parts for IRFR120
This table gives cross-reference parts and alternative options found for IRFR120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR120TRRPBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | IRFR120 vs IRFR120TRRPBF |
IRFR120 | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Vishay Siliconix | IRFR120 vs IRFR120 |
IRFR120 | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | IRFR120 vs IRFR120 |
SIHFR120-GE3 | TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR120 vs SIHFR120-GE3 |
IRFR120PBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | IRFR120 vs IRFR120PBF |
IRFR120TRPBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | IRFR120 vs IRFR120TRPBF |
SIHFR120-GE3 | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | IRFR120 vs SIHFR120-GE3 |
IRFR120 | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Vishay Intertechnologies | IRFR120 vs IRFR120 |
IRFR120T_R4941 | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | IRFR120 vs IRFR120T_R4941 |
IRFR120TRLPBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | IRFR120 vs IRFR120TRLPBF |
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