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Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH6366
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Newark | Mosfet, N-Ch, 100V, 7.7A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:7.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFR120TRPBF-BE3 RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.6100 / $0.7190 | Buy Now |
DISTI #
82AH6197
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Newark | Mosfet, N-Ch, 100V, 7.7A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:7.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFR120TRPBF-BE3 RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.8980 | Buy Now |
DISTI #
IRFR120TRPBF-BE3
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Avnet Americas | MOSFET N-CHANNEL 100V - Tape and Reel (Alt: IRFR120TRPBF-BE3) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$0.3933 | Buy Now |
DISTI #
78-IRFR120TRPBF-BE3
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Mouser Electronics | MOSFETs TO252 100V 7.7A N-CH MOSFET RoHS: Compliant | 4108 |
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$0.5580 / $1.3000 | Buy Now |
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Future Electronics | 100V,7.7A,270MOHM,DPAK - COO: TAIWAN RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 6000Reel |
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$0.4550 / $0.4850 | Buy Now |
DISTI #
73540777
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Verical | Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Date Code: 2305 | Americas - 4000 |
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$0.6496 | Buy Now |
DISTI #
IRFR120TRPBF-BE3
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TTI | MOSFETs TO252 100V 7.7A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel |
Americas - 8000 In Stock |
|
$0.4860 / $0.5340 | Buy Now |
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IRFR120TRPBF-BE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFR120TRPBF-BE3
Vishay Intertechnologies
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 210 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 7.7 A | |
Drain-source On Resistance-Max | 0.27 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 34 pF | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 31 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFR120TRPBF-BE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR120TRPBF-BE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR120PBF-BE3 | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | IRFR120TRPBF-BE3 vs IRFR120PBF-BE3 |
IRFR120TRLPBF-BE3 | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | IRFR120TRPBF-BE3 vs IRFR120TRLPBF-BE3 |