Datasheets
IRFR120TRPBF-BE3 by:

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,

Part Details for IRFR120TRPBF-BE3 by Vishay Intertechnologies

Overview of IRFR120TRPBF-BE3 by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFR120TRPBF-BE3

Part # Distributor Description Stock Price Buy
DISTI # 78AH6366
Newark Mosfet, N-Ch, 100V, 7.7A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:7.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFR120TRPBF-BE3 RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.7190
  • 4,000 $0.6460
  • 6,000 $0.6230
  • 10,000 $0.6100
$0.6100 / $0.7190 Buy Now
DISTI # 82AH6197
Newark Mosfet, N-Ch, 100V, 7.7A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:7.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFR120TRPBF-BE3 RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $0.8980
$0.8980 Buy Now
DISTI # IRFR120TRPBF-BE3
Avnet Americas MOSFET N-CHANNEL 100V - Tape and Reel (Alt: IRFR120TRPBF-BE3) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 2,000 $0.3933
$0.3933 Buy Now
DISTI # 78-IRFR120TRPBF-BE3
Mouser Electronics MOSFETs TO252 100V 7.7A N-CH MOSFET RoHS: Compliant 4108
  • 1 $1.3000
  • 10 $1.0700
  • 100 $0.8280
  • 500 $0.7020
  • 1,000 $0.5720
  • 2,000 $0.5710
  • 10,000 $0.5580
$0.5580 / $1.3000 Buy Now
Future Electronics 100V,7.7A,270MOHM,DPAK - COO: TAIWAN RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel 6000
Reel
  • 2,000 $0.4850
  • 4,000 $0.4750
  • 6,000 $0.4700
  • 8,000 $0.4650
  • 10,000 $0.4550
$0.4550 / $0.4850 Buy Now
DISTI # 73540777
Verical Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Date Code: 2305 Americas - 4000
  • 2,000 $0.6496
$0.6496 Buy Now
DISTI # IRFR120TRPBF-BE3
TTI MOSFETs TO252 100V 7.7A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel Americas - 8000
In Stock
  • 2,000 $0.5340
  • 4,000 $0.5160
  • 6,000 $0.5060
  • 8,000 $0.4960
  • 10,000 $0.4860
$0.4860 / $0.5340 Buy Now

Part Details for IRFR120TRPBF-BE3

IRFR120TRPBF-BE3 CAD Models

IRFR120TRPBF-BE3 Part Data Attributes

IRFR120TRPBF-BE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFR120TRPBF-BE3 Vishay Intertechnologies Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 210 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 7.7 A
Drain-source On Resistance-Max 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 34 pF
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 31 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR120TRPBF-BE3

This table gives cross-reference parts and alternative options found for IRFR120TRPBF-BE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR120TRPBF-BE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR120PBF-BE3 Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies IRFR120TRPBF-BE3 vs IRFR120PBF-BE3
IRFR120TRLPBF-BE3 Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies IRFR120TRPBF-BE3 vs IRFR120TRLPBF-BE3

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