Part Details for IRFR220 by Harris Semiconductor
Results Overview of IRFR220 by Harris Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRFR220 Information
IRFR220 by Harris Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFR220
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | Min Qty: 6 | 988 |
|
$0.2428 / $0.8670 | Buy Now |
|
|
Rochester Electronics | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 528 |
|
$0.4259 / $0.6869 | Buy Now |
|
|
Win Source Electronics | MOSFET N-CH 200V 4.6A TO252AA | 1110 |
|
$0.3636 / $0.5454 | Buy Now |
US Tariff Estimator: IRFR220 by Harris Semiconductor
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for IRFR220
IRFR220 Part Data Attributes
|
|
IRFR220
Harris Semiconductor
Buy Now
Datasheet
|
Compare Parts:
IRFR220
Harris Semiconductor
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
|
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | Unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 85 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 4.6 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 50 W | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 53 ns | |
| Turn-on Time-Max (ton) | 54 ns |
IRFR220 Frequently Asked Questions (FAQ)
-
The maximum safe operating area (SOA) for the IRFR220 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure reliable operation.
-
To calculate the junction temperature of the IRFR220, you can use the following formula: Tj = Ta + (Pd x Rthja), where Tj is the junction temperature, Ta is the ambient temperature, Pd is the power dissipation, and Rthja is the thermal resistance from junction to ambient. The thermal resistance values can be found in the datasheet.
-
The recommended gate drive voltage for the IRFR220 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.
-
Yes, the IRFR220 is suitable for high-frequency switching applications up to several hundred kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the gate drive circuitry is capable of providing a clean and stable signal.
-
To protect the IRFR220 from overvoltage and overcurrent conditions, you can use a combination of voltage clamping devices, such as zener diodes or transient voltage suppressors, and current sensing resistors or fuses. Additionally, ensure that the device is operated within its specified voltage and current ratings.