-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
13AC9125
|
Newark | Mosfet, N-Ch, 75V, 42A, To-252Aa, Transistor Polarity:N Channel, Continuous Drain Current Id:42A, Drain Source Voltage Vds:75V, On Resistance Rds(On):0.0128Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IRFR2307ZTRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2449 |
|
$0.9570 / $1.3900 | Buy Now |
DISTI #
IRFR2307ZTRLPBF
|
Avnet Americas | Trans MOSFET N-CH 75V 53A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR2307ZTRLPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.5925 / $0.6771 | Buy Now |
DISTI #
942-IRFR2307ZTRLPBF
|
Mouser Electronics | MOSFET MOSFT 75V 53A 16mOhm 50nC Qg RoHS: Compliant | 4820 |
|
$0.6340 / $1.1200 | Buy Now |
DISTI #
70018996
|
RS | IRFR2307ZTRLPBF N-channel MOSFET Transistor, 53 A, 75 V, 3-Pin TO-252AA | Infineon IRFR2307ZTRLPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
|
$1.2200 / $1.4400 | RFQ |
|
Future Electronics | MOSFET MOSFT 75V 53A 16mOhm 50nC Qg RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks Container: Reel | 3000Reel |
|
$0.6200 / $0.6450 | Buy Now |
|
Future Electronics | MOSFET MOSFT 75V 53A 16mOhm 50nC Qg RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks Container: Reel | 0Reel |
|
$0.6200 / $0.6450 | Buy Now |
|
Future Electronics | MOSFET MOSFT 75V 53A 16mOhm 50nC Qg RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks Container: Reel | 0Reel |
|
$0.6200 / $0.6450 | Buy Now |
|
Rochester Electronics | IRFR2307 - HEXFET N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 9000 |
|
$0.6294 / $0.7405 | Buy Now |
DISTI #
SP001555008
|
EBV Elektronik | Trans MOSFET N-CH 75V 53A 3-Pin(2+Tab) DPAK T/R (Alt: SP001555008) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IRFR2307ZTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRFR2307ZTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 42 A | |
Drain-source On Resistance-Max | 0.016 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 110 W | |
Pulsed Drain Current-Max (IDM) | 210 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFR2307ZTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR2307ZTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
AUIRFR2307ZTRL | Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR2307ZTRLPBF vs AUIRFR2307ZTRL |
AUIRFR2307ZTRR | Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRFR2307ZTRLPBF vs AUIRFR2307ZTRR |
IRFR2307ZTRPBF | Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR2307ZTRLPBF vs IRFR2307ZTRPBF |
IRFR2307ZPBF | Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR2307ZTRLPBF vs IRFR2307ZPBF |
IRFR2307ZTRRPBF | Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR2307ZTRLPBF vs IRFR2307ZTRRPBF |
AUIRFR2307Z | Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR2307ZTRLPBF vs AUIRFR2307Z |
IRFR2307Z | Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR2307ZTRLPBF vs IRFR2307Z |
IRFR2307ZPBF | Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR2307ZTRLPBF vs IRFR2307ZPBF |
IRFR2307Z | Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR2307ZTRLPBF vs IRFR2307Z |
AUIRFR2307Z | Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRFR2307ZTRLPBF vs AUIRFR2307Z |