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Part Details for IRFR2905ZTRPBF by Infineon Technologies AG
Results Overview of IRFR2905ZTRPBF by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (3 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFR2905ZTRPBF Information
IRFR2905ZTRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFR2905ZTRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9129
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Newark | Mosfet, N-Ch, 55V, 42A, To-252Aa, Transistor Polarity:N Channel, Continuous Drain Current Id:42A, Drain Source Voltage Vds:55V, On Resistance Rds(On):0.0111Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IRFR2905ZTRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1810 |
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$0.6470 / $1.8000 | Buy Now |
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DISTI #
IRFR2905ZTRPBF
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Avnet Americas | Power MOSFET, N Channel, 55 V, 42 A, 0.0145 ohm, TO-252AA, Surface Mount - Tape and Reel (Alt: IRFR2905ZTRPBF) COO: Taiwan (Province of China) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$0.2504 / $0.2864 | Buy Now |
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DISTI #
70019000
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RS | MOSFET, 55V, 59A, 14.5 MOHM, 29 NC QG, D-PAK Min Qty: 2000 Package Multiple: 1 Container: Bulk | 0 |
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$1.7300 / $2.0400 | RFQ |
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DISTI #
IRFR2905ZTRPBF
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IBS Electronics | SINGLE N-CHANNEL 55 V 14.5 MOHM 29 NC HEXFET®, POWER MOSFET - TO-252AA Min Qty: 2000 Package Multiple: 1 | 4000 |
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$0.5530 / $0.5740 | Buy Now |
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DISTI #
IRFR2905ZTRPBF
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 2000 |
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$0.3920 / $1.6500 | Buy Now |
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Chip Stock | SingleN-Channel55V14.5mOhm29nCHEXFET®PowerMosfet-TO-252AA | 51640 |
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RFQ | |
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DISTI #
SP001552100
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EBV Elektronik | Power MOSFET N Channel 55 V 42 A 00145 ohm TO252AA Surface Mount (Alt: SP001552100) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 55V 42A 110W 1 N-Channel DPAK(TO-252AA) Single FETs MOSFETs RoHS | 4 |
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$0.4603 / $0.4851 | Buy Now |
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Win Source Electronics | MOSFET N-CH 55V 42A DPAK | 22388 |
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$0.4145 / $0.6217 | Buy Now |
Part Details for IRFR2905ZTRPBF
IRFR2905ZTRPBF CAD Models
IRFR2905ZTRPBF Part Data Attributes
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IRFR2905ZTRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFR2905ZTRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Package Description | To-252, Dpak-3/2 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Avalanche Energy Rating (Eas) | 55 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.0145 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 120 Pf | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - With Nickel (Ni) Barrier | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for IRFR2905ZTRPBF
This table gives cross-reference parts and alternative options found for IRFR2905ZTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR2905ZTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFR2905ZPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRFR2905ZTRPBF vs IRFR2905ZPBF |
| IRFR2905ZTRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRFR2905ZTRPBF vs IRFR2905ZTRPBF |
| IRFR2905ZTRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRFR2905ZTRPBF vs IRFR2905ZTRLPBF |
IRFR2905ZTRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFR2905ZTRPBF is -55°C to 175°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive interface material, and ensuring good airflow around the device.
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The recommended gate drive voltage for the IRFR2905ZTRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the IRFR2905ZTRPBF from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or container.
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The maximum allowable power dissipation for the IRFR2905ZTRPBF is 150W, but this value can be derated based on the operating temperature and other factors.