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Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
42Y0380
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Newark | Mosfet Transistor, N Channel, 31 A, 100 V, 0.034 Ohm, 10 V, 4 V Rohs Compliant: Yes |Infineon IRFR3410TRPBF RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 709 |
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$0.5800 / $1.0300 | Buy Now |
DISTI #
86AK5312
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Newark | Mosfet, N-Ch, 100V, 31A, To-252Aa Rohs Compliant: Yes |Infineon IRFR3410TRPBF RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.4560 / $0.4890 | Buy Now |
DISTI #
IRFR3410TRPBFCT-ND
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DigiKey | MOSFET N-CH 100V 31A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
14663 In Stock |
|
$0.3570 / $1.4600 | Buy Now |
DISTI #
IRFR3410TRPBF
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Avnet Americas | Trans MOSFET N-CH 100V 31A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR3410TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days Container: Reel | 2000 |
|
$0.2677 | Buy Now |
DISTI #
IRFR3410TRPBF
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Avnet Americas | Trans MOSFET N-CH 100V 31A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR3410TRPBF) RoHS: Compliant Min Qty: 876 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 92000 Partner Stock |
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$0.3627 / $0.4084 | Buy Now |
DISTI #
942-IRFR3410TRPBF
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Mouser Electronics | MOSFETs 100V SINGLE N-CH 39mOhms 37nC RoHS: Compliant | 28395 |
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$0.3570 / $0.8400 | Buy Now |
DISTI #
70017759
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 34 Milliohms, ID 31A, D-Pak (TO-252AA),-55C | Infineon IRFR3410TRPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$0.8000 / $0.9400 | RFQ |
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Future Electronics | Single N-Channel 100 V 39 mOhm 56 nC HEXFET® Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks Container: Reel | 980000Reel |
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$0.2800 / $0.3000 | Buy Now |
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Future Electronics | Single N-Channel 100 V 39 mOhm 56 nC HEXFET® Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Container: Cut Tape/Mini-Reel | 12Cut Tape/Mini-Reel |
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$0.5300 / $0.7950 | Buy Now |
|
Future Electronics | Single N-Channel 100 V 39 mOhm 56 nC HEXFET® Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks Container: Reel | 0Reel |
|
$0.2800 / $0.3000 | Buy Now |
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IRFR3410TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFR3410TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 140 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.039 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 110 W | |
Pulsed Drain Current-Max (IDM) | 125 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFR3410TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR3410TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR3410TRR | Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR3410TRPBF vs IRFR3410TRR |
IRFR3410TRRPBF | Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3410TRPBF vs IRFR3410TRRPBF |
IRFR3410PBF | Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3410TRPBF vs IRFR3410PBF |
IRFR3410TRL | Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR3410TRPBF vs IRFR3410TRL |