Part Details for IRFR3412 by International Rectifier
Overview of IRFR3412 by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for IRFR3412
IRFR3412 CAD Models
IRFR3412 Part Data Attributes:
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IRFR3412
International Rectifier
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Datasheet
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IRFR3412
International Rectifier
Power Field-Effect Transistor, 30A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-252AA | |
Package Description | PLASTIC, DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 160 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 240 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 140 W | |
Pulsed Drain Current-Max (IDM) | 190 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFR3412
This table gives cross-reference parts and alternative options found for IRFR3412. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR3412, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFR3412TRPBF | Power Field-Effect Transistor, 30A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3412 vs IRFR3412TRPBF |
IRFR3412TR | Power Field-Effect Transistor, 30A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR3412 vs IRFR3412TR |
IRFR3412TRLPBF | Power Field-Effect Transistor, 30A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3412 vs IRFR3412TRLPBF |
IRFR3412PBF | Power Field-Effect Transistor, 30A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3412 vs IRFR3412PBF |
IRFR3412TRRPBF | Power Field-Effect Transistor, 30A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3412 vs IRFR3412TRRPBF |
IRFR3412TRL | Power Field-Effect Transistor, 30A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR3412 vs IRFR3412TRL |