Transistors
IRFR3910TRPBF
Description: Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

Overview of IRFR3910TRPBF by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFR3910TRPBF by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   1147
RFQ
Bristol Electronics   20
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-252AA 917
  • 1 $1.3315
  • 76 $0.6658
  • 301 $0.5326
$0.5326 / $1.3315 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-252AA 16
  • 1 $0.9450
  • 6 $0.7560
$0.7560 / $0.9450 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-252AA 7
  • 1 $0.7989
  • 7 $0.6658
$0.6658 / $0.7989 Buy Now

CAD Models for IRFR3910TRPBF by International Rectifier
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Part Data Attributes for IRFR3910TRPBF by International Rectifier

IRFR3910TRPBF
International Rectifier
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
TO-252AA
Package Description
LEAD FREE, PLASTIC, DPAK-3
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
150 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
16 A
Drain-source On Resistance-Max
0.115 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
79 W
Pulsed Drain Current-Max (IDM)
60 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFR3910TRPBF
    International Rectifier
    Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
    VS

Alternate Parts for IRFR3910TRPBF

This table gives cross-reference parts and alternative options found for IRFR3910TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR3910TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFR3910 Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Infineon Technologies AG IRFR3910TRPBF vs IRFR3910
IRFR3910TRRPBF Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR3910TRPBF vs IRFR3910TRRPBF
IRFR3910TRLPBF Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR3910TRPBF vs IRFR3910TRLPBF
IRFR3910TRLPBF Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRFR3910TRPBF vs IRFR3910TRLPBF
IRFR3910PBF Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRFR3910TRPBF vs IRFR3910PBF
IRFR3910 Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR3910TRPBF vs IRFR3910
IRFR3910TRR Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR3910TRPBF vs IRFR3910TRR
IRFR3910PBF Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR3910TRPBF vs IRFR3910PBF
IRFR3910TR Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR3910TRPBF vs IRFR3910TR
IRFR3910TRPBF Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRFR3910TRPBF vs IRFR3910TRPBF
Part Number Description Manufacturer Compare
IRFR3910PBF Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRFR3910TRPBF vs IRFR3910PBF
IRFR3910 Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Infineon Technologies AG IRFR3910TRPBF vs IRFR3910
IRFR3910TRLPBF Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR3910TRPBF vs IRFR3910TRLPBF
IRFR3910TRR Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR3910TRPBF vs IRFR3910TRR
IRFR3910TR Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR3910TRPBF vs IRFR3910TR
IRFR3910PBF Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR3910TRPBF vs IRFR3910PBF
IRFR3910TRPBF Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRFR3910TRPBF vs IRFR3910TRPBF
IRFR3910TRRPBF Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR3910TRPBF vs IRFR3910TRRPBF
IRFR3910TRLPBF Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRFR3910TRPBF vs IRFR3910TRLPBF

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