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Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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IRFR6215TRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
38AH8479
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Newark | Planar >= 100V Rohs Compliant: Yes |Infineon IRFR6215TRLPBF RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 30000 |
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$0.6110 | Buy Now |
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DISTI #
13AC9143
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Newark | Mosfet, P-Ch, 150V, 13A, 175Deg C, 110W, Channel Type:P Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:13A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFR6215TRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2623 |
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$0.5170 / $0.5640 | Buy Now |
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DISTI #
IRFR6215TRLPBF
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Avnet Americas | Power MOSFET, P Channel, 150 V, 13 A, 0.295 ohm, TO-252AA, Surface Mount - Tape and Reel (Alt: IRFR6215TRLPBF) COO: Malaysia RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days Container: Reel | 30000 |
|
$0.4299 / $0.4918 | Buy Now |
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DISTI #
70017783
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RS | MOSFET, POWER, P-CH, VDSS -150V, RDS(ON) 0.295OHM, ID -13A, D-PAK (TO-252AA),PD 110W Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
|
$1.6600 / $1.9500 | RFQ |
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Bristol Electronics | 197 |
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RFQ | ||
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DISTI #
IRFR6215TRLPBF
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TME | Transistor: P-MOSFET, unipolar, 150V, 13A, DPAK Min Qty: 1 | 0 |
|
$0.5100 / $1.5600 | RFQ |
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DISTI #
IRFR6215TRLPBF
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IBS Electronics | MOSFET POWER P-CH VDSS -150V RDS(ON) 0.295 OHM ID -13A D-PAK (TO-252AA) PD 110W Min Qty: 3000 Package Multiple: 1 | 3000 |
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$0.7420 / $0.7630 | Buy Now |
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|
Chip 1 Exchange | INSTOCK | 2359 |
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RFQ | |
|
DISTI #
IRFR6215TRLPBF
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 6295 |
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$0.3340 / $1.4000 | Buy Now |
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|
Chip Stock | Mosfet,Power, P-ch, Vdss-150V, Rds(on)0.295Ohm, Id-13A, D-pak(TO-252AA), Pd110W | 26150 |
|
RFQ |
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IRFR6215TRLPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRFR6215TRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | Lead Free, Plastic, Dpak-3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 310 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.295 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-Channel | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - With Nickel (Ni) Barrier | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
This table gives cross-reference parts and alternative options found for IRFR6215TRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR6215TRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFR6215 | International Rectifier | Check for Price | Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | IRFR6215TRLPBF vs IRFR6215 |
The maximum operating temperature range for the IRFR6215TRLPBF is -40°C to 150°C.
The recommended PCB footprint for the IRFR6215TRLPBF is a 5x6 pad layout with a thermal pad in the center. The pad dimensions are typically 0.5mm x 0.5mm with a 0.2mm spacing.
To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a small amount of solder paste to the PCB pads. Use a reflow oven or a hot air gun to solder the component.
The maximum current rating for the IRFR6215TRLPBF is 15A, but it's recommended to derate the current to 10A for continuous operation to ensure reliability.
To handle thermal management, ensure good thermal conductivity between the device and the PCB, and consider using a heat sink or thermal interface material to dissipate heat. Keep the device away from other heat sources and ensure good airflow around the component.