Part Details for IRFR9010-T1 by Samsung Semiconductor
Overview of IRFR9010-T1 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
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Part Details for IRFR9010-T1
IRFR9010-T1 CAD Models
IRFR9010-T1 Part Data Attributes
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IRFR9010-T1
Samsung Semiconductor
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Datasheet
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IRFR9010-T1
Samsung Semiconductor
Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 240 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 50 V | |
Drain Current-Max (ID) | 5.3 A | |
Drain-source On Resistance-Max | 0.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 25 W | |
Pulsed Drain Current-Max (IDM) | 21 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 79 ns | |
Turn-on Time-Max (ton) | 80.2 ns |
Alternate Parts for IRFR9010-T1
This table gives cross-reference parts and alternative options found for IRFR9010-T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR9010-T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFR9010TRL | Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRFR9010-T1 vs IRFR9010TRL |
IRFR9010PBF | TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR9010-T1 vs IRFR9010PBF |
IRFR9010 | Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | International Rectifier | IRFR9010-T1 vs IRFR9010 |
IRFR9010PBF | Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Vishay Intertechnologies | IRFR9010-T1 vs IRFR9010PBF |
IRFR9010TRPBF | TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR9010-T1 vs IRFR9010TRPBF |
IRFR9010TRLPBF | TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR9010-T1 vs IRFR9010TRLPBF |
IRFR9010 | Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | IRFR9010-T1 vs IRFR9010 |
IRFR9010TRLPBF | Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Vishay Intertechnologies | IRFR9010-T1 vs IRFR9010TRLPBF |
IRFR9010TRR | Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRFR9010-T1 vs IRFR9010TRR |