Datasheets
IRFR9024 by:

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

Part Details for IRFR9024 by International Rectifier

Overview of IRFR9024 by International Rectifier

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Price & Stock for IRFR9024

Part # Distributor Description Stock Price Buy
Bristol Electronics   3337
RFQ
Quest Components MOSFET Transistor, P-Channel, TO-252AA 2619
  • 1 $0.7500
  • 572 $0.3125
  • 2,561 $0.2750
$0.2750 / $0.7500 Buy Now
Quest Components MOSFET Transistor, P-Channel, TO-252AA 83
  • 1 $1.2500
  • 21 $0.7500
  • 81 $0.6250
$0.6250 / $1.2500 Buy Now
Quest Components MOSFET Transistor, P-Channel, TO-252AA 68
  • 1 $1.2500
  • 5 $1.0000
  • 21 $0.7500
$0.7500 / $1.2500 Buy Now
Quest Components MOSFET Transistor, P-Channel, TO-252AA 46
  • 1 $1.5400
  • 4 $1.2320
  • 17 $0.9240
$0.9240 / $1.5400 Buy Now
Quest Components MOSFET Transistor, P-Channel, TO-252AA 55
  • 1 $1.8000
  • 4 $1.4400
  • 15 $1.0800
$1.0800 / $1.8000 Buy Now
Quest Components MOSFET Transistor, P-Channel, TO-252AA 264
  • 1 $1.2500
  • 21 $0.7500
  • 81 $0.6250
$0.6250 / $1.2500 Buy Now
Chip 1 Exchange INSTOCK 2184
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 60
  • 1 $1.9200
  • 100 $1.4400
  • 1,000 $1.2500
$1.2500 / $1.9200 Buy Now

Part Details for IRFR9024

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IRFR9024 Part Data Attributes

IRFR9024 International Rectifier
Buy Now Datasheet
Compare Parts:
IRFR9024 International Rectifier Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-252AA
Package Description DPAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 8.8 A
Drain-source On Resistance-Max 0.28 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 42 W
Power Dissipation-Max (Abs) 42 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR9024

This table gives cross-reference parts and alternative options found for IRFR9024. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR9024, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR9024TRLPBF Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRFR9024 vs IRFR9024TRLPBF
IRFR9024TRR Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR9024 vs IRFR9024TRR
IRFR9024TRPBF TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9024 vs IRFR9024TRPBF
IRFR9024 Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, D-PAK-3 Vishay Intertechnologies IRFR9024 vs IRFR9024
SIHFR9024-GE3 TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9024 vs SIHFR9024-GE3
IRFR9024TRRPBF TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9024 vs IRFR9024TRRPBF
IRFR9024PBF Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFR9024 vs IRFR9024PBF
IRFR9024 Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFR9024 vs IRFR9024
IRFR9024TR Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFR9024 vs IRFR9024TR
IRFR9024TRLPBF TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9024 vs IRFR9024TRLPBF
Part Number Description Manufacturer Compare
IRFR9024TR Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFR9024 vs IRFR9024TR
IRFR9024TRLPBF Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRFR9024 vs IRFR9024TRLPBF
IRFR9024TRR Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR9024 vs IRFR9024TRR
IRFR9024TRPBF TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9024 vs IRFR9024TRPBF
IRFR9024TRL Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR9024 vs IRFR9024TRL
IRFR9024 Power Field-Effect Transistor, 9.9A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR9024 vs IRFR9024
IRFR9024PBF Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFR9024 vs IRFR9024PBF
IRFR9024PBF Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR9024 vs IRFR9024PBF
IRFR9024 Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, D-PAK-3 Vishay Intertechnologies IRFR9024 vs IRFR9024
IRFR9024TRRPBF TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9024 vs IRFR9024TRRPBF

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