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Part Details for IRFR9024PBF-BE3 by Vishay Intertechnologies
Overview of IRFR9024PBF-BE3 by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFR9024PBF-BE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
87AJ1545
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Newark | P-Channel 60V |Vishay IRFR9024PBF-BE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.8580 | Buy Now |
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DISTI #
IRFR9024PBF-BE3
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Avnet Americas | P-CHANNEL 60V - Rail/Tube (Alt: IRFR9024PBF-BE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Lead time: 13 Weeks, 0 Days Container: Tube | 0 |
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$0.7857 | Buy Now |
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DISTI #
78-IRFR9024PBF-BE3
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Mouser Electronics | MOSFETs TO252 P CHAN 60V RoHS: Compliant | 8672 |
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$0.8090 / $1.8700 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 | 0 |
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$0.8240 | Buy Now |
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DISTI #
IRFR9024PBF-BE3
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TTI | MOSFETs TO252 P CHAN 60V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.7800 / $0.8100 | Buy Now |
Part Details for IRFR9024PBF-BE3
IRFR9024PBF-BE3 CAD Models
IRFR9024PBF-BE3 Part Data Attributes
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IRFR9024PBF-BE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFR9024PBF-BE3
Vishay Intertechnologies
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 8.8 A | |
| Drain-source On Resistance-Max | 0.28 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 65 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 35 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |