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Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38K2640
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Newark | Mosfet Transistor, P Channel, 3.1 A, 100 V, 1.2 Ohm, -10 V, -4 V Rohs Compliant: Yes |Vishay IRFR9110PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 4664 |
|
$0.6470 / $1.0200 | Buy Now |
DISTI #
IRFR9110PBF
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Avnet Americas | Trans MOSFET P-CH 100V 3.1A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: IRFR9110PBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
|
$0.3821 / $0.4854 | Buy Now |
DISTI #
E02:0323_00021415
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Arrow Electronics | Trans MOSFET P-CH 100V 3.1A 3-Pin(2+Tab) DPAK Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2350 | Europe - 2590 |
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$0.3706 / $0.6466 | Buy Now |
DISTI #
V99:2348_09218360
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Arrow Electronics | Trans MOSFET P-CH 100V 3.1A 3-Pin(2+Tab) DPAK Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2146 | Americas - 198 |
|
$0.4343 / $0.6387 | Buy Now |
DISTI #
70078964
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RS | Power MOSFET, P-Ch, VDSS -100V, RDS(ON) 1.2Ohms, ID -3.1A, TO-252AA, PD 25W, VGS+/-20V | Vishay PCS IRFR9110PBF RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$0.8800 / $1.0300 | RFQ |
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Future Electronics | Single P-Channel 100 V 1.2 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube | 0Tube |
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$0.3650 / $0.4300 | Buy Now |
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Future Electronics | Single P-Channel 100 V 1.2 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube | 0Tube |
|
$0.3650 / $0.4300 | Buy Now |
DISTI #
79002058
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Verical | Trans MOSFET P-CH 100V 3.1A 3-Pin(2+Tab) DPAK Min Qty: 26 Package Multiple: 1 Date Code: 2350 | Americas - 2574 |
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$0.3709 / $0.5371 | Buy Now |
DISTI #
61160839
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Verical | Trans MOSFET P-CH 100V 3.1A 3-Pin(2+Tab) DPAK Min Qty: 14 Package Multiple: 1 Date Code: 2146 | Americas - 198 |
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$0.4343 / $0.5517 | Buy Now |
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Quest Components | 3.1 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 | 8 |
|
$1.1760 / $1.4700 | Buy Now |
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IRFR9110PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFR9110PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | TO-252AA | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 140 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 3.1 A | |
Drain-source On Resistance-Max | 1.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 25 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFR9110PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR9110PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR9110 | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Rochester Electronics LLC | IRFR9110PBF vs IRFR9110 |
IRFR9110TRRPBF | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR9110PBF vs IRFR9110TRRPBF |
SIHFR9110TRL-GE3 | TRANSISTOR 3.1 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR9110PBF vs SIHFR9110TRL-GE3 |
IRFR9110TRL | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRFR9110PBF vs IRFR9110TRL |
SIHFR9110TR-GE3 | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Vishay Intertechnologies | IRFR9110PBF vs SIHFR9110TR-GE3 |
IRFR9110TRPBF | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR9110PBF vs IRFR9110TRPBF |
IRFR91109A | 3.1A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | IRFR9110PBF vs IRFR91109A |
IRFR91109A | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Harris Semiconductor | IRFR9110PBF vs IRFR91109A |
IRFR9110TRR | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRFR9110PBF vs IRFR9110TRR |
IRFR9110TRPBF | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | IRFR9110PBF vs IRFR9110TRPBF |