| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
40M7907
|
Newark | P Channel Mosfet, -100V, 6.6A D-Pak, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:6.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFR9120NTRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 93 |
|
$0.5290 / $1.1100 | Buy Now | |
|
DISTI #
IRFR9120NPBFCT-ND
|
DigiKey | MOSFET P-CH 100V 6.6A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
17665 In Stock |
|
$0.3728 / $1.5500 | Buy Now | |
|
DISTI #
40M7907
|
Avnet Americas | Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 40M7907) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 4 Days Container: Ammo Pack | 93 Partner Stock |
|
$0.7340 / $1.1100 | Buy Now | |
|
DISTI #
IRFR9120NTRPBF
|
Avnet Americas | Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR9120NTRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$0.2827 | Buy Now | |
|
DISTI #
942-IRFR9120NTRPBF
|
Mouser Electronics | MOSFETs 20V -100V P-CH FET 480mOhms 18nC RoHS: Compliant | 8916 |
|
$0.3720 / $0.9900 | Buy Now | |
|
DISTI #
70017790
|
RS | MOSFET, Power, P-Ch, VDSS -100V, RDS(ON) 0.48Ohm, ID -6.6A, D-Pak (TO-252AA),PD 40W | Infineon IRFR9120NTRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
|
$0.8800 / $1.0300 | RFQ | |
| Future Electronics | Single P-Channel 100 V 0.48 Ohm 27 nC HEXFET® Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks Container: Reel | 22000Reel |
|
$0.3400 / $0.3650 | Buy Now | ||
| Future Electronics | Single P-Channel 100 V 0.48 Ohm 27 nC HEXFET® Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks Container: Reel | 0Reel |
|
$0.3400 / $0.3650 | Buy Now | ||
| Quest Components | MOSFET Transistor, P-Channel, TO-252AA | 183 |
|
$0.3360 / $0.7200 | Buy Now | ||
|
DISTI #
IRFR9120NTRPBF
|
TME | Transistor: P-MOSFET, unipolar, -100V, -6.5A, 39W, DPAK Min Qty: 1 | 1334 |
|
$0.3940 / $0.9630 | Buy Now |
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
18 Weeks, 4 Days
|
|
Samacsys Manufacturer
|
Infineon
|
|
Additional Feature
|
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
|
|
Avalanche Energy Rating (Eas)
|
100 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
100 V
|
|
Drain Current-Max (ID)
|
6.6 A
|
|
Drain-source On Resistance-Max
|
0.48 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-252AA
|
|
JESD-30 Code
|
R-PSSO-G2
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
P-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
40 W
|
|
Pulsed Drain Current-Max (IDM)
|
26 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
Matte Tin (Sn) - with Nickel (Ni) barrier
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR9120NPBF | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR9120NTRPBF vs IRFR9120NPBF |
| IRFR9120N | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR9120NTRPBF vs IRFR9120N |
| IRFR9120NTRRPBF | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR9120NTRPBF vs IRFR9120NTRRPBF |
| IRFR9120N | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR9120NTRPBF vs IRFR9120N |
| IRFR9120NTRR | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR9120NTRPBF vs IRFR9120NTRR |
| IRFR9120NTRLPBF | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR9120NTRPBF vs IRFR9120NTRLPBF |
| IRFR9120NTRL | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR9120NTRPBF vs IRFR9120NTRL |
| IRFR9120NTRPBF | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR9120NTRPBF vs IRFR9120NTRPBF |
| IRFR9120NPBF | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR9120NTRPBF vs IRFR9120NPBF |