There are no models available for this part yet.
Overview of IRFS30N20DPBF by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 7 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
CAD Models for IRFS30N20DPBF by Infineon Technologies AG
Part Data Attributes for IRFS30N20DPBF by Infineon Technologies AG
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Package Description
|
SMALL OUTLINE, R-PSSO-G2
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Avalanche Energy Rating (Eas)
|
420 mJ
|
Case Connection
|
DRAIN
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Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
200 V
|
Drain Current-Max (ID)
|
30 A
|
Drain-source On Resistance-Max
|
0.082 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
|
R-PSSO-G2
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Number of Elements
|
1
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Number of Terminals
|
2
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Operating Mode
|
ENHANCEMENT MODE
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Operating Temperature-Max
|
175 °C
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Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
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Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM)
|
120 A
|
Surface Mount
|
YES
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IRFS30N20DPBF
This table gives cross-reference parts and alternative options found for IRFS30N20DPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS30N20DPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FQB32N20CTM | Power Field-Effect Transistor, 28A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Fairchild Semiconductor Corporation | IRFS30N20DPBF vs FQB32N20CTM |
IRFL30N20DPBF | Power Field-Effect Transistor, 30A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Infineon Technologies AG | IRFS30N20DPBF vs IRFL30N20DPBF |
IRFW650B | Power Field-Effect Transistor, 28A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Fairchild Semiconductor Corporation | IRFS30N20DPBF vs IRFW650B |
2376 | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | NTE Electronics Inc | IRFS30N20DPBF vs 2376 |
IRFB31N20DPBF | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRFS30N20DPBF vs IRFB31N20DPBF |
IRFSL31N20D | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Infineon Technologies AG | IRFS30N20DPBF vs IRFSL31N20D |
IRFB31N20D | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | IRFS30N20DPBF vs IRFB31N20D |