Part Details for IRFS3206TRRPBF by Infineon Technologies AG
Overview of IRFS3206TRRPBF by Infineon Technologies AG
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFS3206TRRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9152
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Newark | Mosfet, N-Ch, 60V, 120A, 175Deg C, 300W, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:120A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFS3206TRRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 160 |
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$2.5800 / $3.0700 | Buy Now |
DISTI #
86AK5326
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Newark | Mosfet, N-Ch, 60V, 120A, To-263Ab Rohs Compliant: Yes |Infineon IRFS3206TRRPBF RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.7100 / $2.0200 | Buy Now |
DISTI #
IRFS3206TRRPBFCT-ND
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DigiKey | MOSFET N-CH 60V 120A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
7421 In Stock |
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$1.4516 / $4.0700 | Buy Now |
DISTI #
13AC9152
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Avnet Americas | Trans MOSFET N-CH 60V 210A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (Alt: 13AC9152) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Ammo Pack | 160 Partner Stock |
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$2.4600 / $3.0800 | Buy Now |
DISTI #
IRFS3206TRRPBF
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Avnet Americas | Trans MOSFET N-CH 60V 210A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS3206TRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.1008 | Buy Now |
DISTI #
942-IRFS3206TRRPBF
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Mouser Electronics | MOSFETs MOSFT 60V 210A 3mOhm 120nC Qg RoHS: Compliant | 1599 |
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$1.4300 / $3.4000 | Buy Now |
DISTI #
70019022
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RS | IRFS3206TRRPBF N-channel MOSFET Transistor, 210 A, 60 V, 3-Pin D2PAK | Infineon IRFS3206TRRPBF RoHS: Not Compliant Min Qty: 800 Package Multiple: 1 Container: Bulk | 0 |
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$2.4600 / $3.0800 | RFQ |
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Future Electronics | Single N-Channel 60V 3 mOhm 120 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks Container: Reel | 0Reel |
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$1.4300 / $1.4900 | Buy Now |
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Future Electronics | Single N-Channel 60V 3 mOhm 120 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks Container: Reel | 0Reel |
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$1.4300 / $1.4800 | Buy Now |
DISTI #
IRFS3206TRRPBF
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TME | Transistor: N-MOSFET, unipolar, 60V, 210A, 300W, D2PAK Min Qty: 800 | 0 |
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$1.5000 | RFQ |
Part Details for IRFS3206TRRPBF
IRFS3206TRRPBF CAD Models
IRFS3206TRRPBF Part Data Attributes
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IRFS3206TRRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFS3206TRRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 4 Days | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 170 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.003 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 840 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFS3206TRRPBF
This table gives cross-reference parts and alternative options found for IRFS3206TRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS3206TRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFS3206PBF | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | IRFS3206TRRPBF vs IRFS3206PBF |
AUIRFS3206 | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Infineon Technologies AG | IRFS3206TRRPBF vs AUIRFS3206 |
AUIRFS3206TRR | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | International Rectifier | IRFS3206TRRPBF vs AUIRFS3206TRR |
IRFS3206TRLPBF | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | IRFS3206TRRPBF vs IRFS3206TRLPBF |
IRFS3206PBF | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | International Rectifier | IRFS3206TRRPBF vs IRFS3206PBF |
IRFS3206TRRPBF | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | International Rectifier | IRFS3206TRRPBF vs IRFS3206TRRPBF |
AUIRFS3206TRL | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Infineon Technologies AG | IRFS3206TRRPBF vs AUIRFS3206TRL |