Part Details for IRFS3207TRLPBF by Infineon Technologies AG
Results Overview of IRFS3207TRLPBF by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (4 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRFS3207TRLPBF Information
IRFS3207TRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFS3207TRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFS3207TRLPBF
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Avnet Americas | Power MOSFET, N Channel, 75 V, 170 A, 0.0036 ohm, TO-263AB, Surface Mount - Tape and Reel (Alt: IRFS3207TRLPBF) COO: Taiwan (Province of China) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$1.1137 / $1.1914 | Buy Now |
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DISTI #
70019023
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RS | MOSFET, 75V, 180A, 4.5 MOHM, 180 NC QG, D2-PAK Min Qty: 800 Package Multiple: 1 Container: Bulk | 0 |
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$5.0500 / $5.9400 | RFQ |
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Rochester Electronics | Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 248 |
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$1.2300 / $1.5400 | Buy Now |
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Chip Stock | NCHPOWERMOSFET,HEXFET,75V,170A,D2PAK, TransistorPolarity:NChannel, Cont | 28500 |
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RFQ | |
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DISTI #
SP001578312
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EBV Elektronik | Power MOSFET N Channel 75 V 170 A 00036 ohm TO263AB Surface Mount (Alt: SP001578312) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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DISTI #
IRFS3207TRLPBF
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Maritex | MOSFET Devices, INFINEON, IRFS3207TRLPBF, 75 V, 130 A, 20 V, 300 W Min Qty: 1 Package Multiple: 1 | 11000 |
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$1.3220 / $2.5840 | Buy Now |
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Win Source Electronics | MOSFET N-CH 75V 170A D2PAK | 25000 |
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$1.3913 / $2.0869 | Buy Now |
Part Details for IRFS3207TRLPBF
IRFS3207TRLPBF CAD Models
IRFS3207TRLPBF Part Data Attributes
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IRFS3207TRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFS3207TRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Avalanche Energy Rating (Eas) | 910 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0045 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 720 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - With Nickel (Ni) Barrier | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for IRFS3207TRLPBF
This table gives cross-reference parts and alternative options found for IRFS3207TRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS3207TRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFS3207ZTRRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRFS3207TRLPBF vs IRFS3207ZTRRPBF |
| IRFS3207TRRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | IRFS3207TRLPBF vs IRFS3207TRRPBF |
| IRFS3207ZPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRFS3207TRLPBF vs IRFS3207ZPBF |
| IRFS3207ZTRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRFS3207TRLPBF vs IRFS3207ZTRLPBF |
IRFS3207TRLPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFS3207TRLPBF is -55°C to 175°C.
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To ensure reliability, follow the recommended operating conditions, use a proper thermal design, and implement adequate cooling mechanisms to prevent overheating.
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The recommended gate drive voltage for the IRFS3207TRLPBF is between 10V and 15V, with a maximum voltage of 20V.
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Handle the device with anti-static precautions, use ESD-protective packaging, and implement ESD protection circuits in the design.
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The maximum allowable current for the IRFS3207TRLPBF is 320A, with a maximum pulsed current of 640A.