Part Details for IRFS3307ZTRLPBF by Infineon Technologies AG
Overview of IRFS3307ZTRLPBF by Infineon Technologies AG
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFS3307ZTRLPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AC1756
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Newark | Mosfet, N-Ch, 75V, 120A, To-263Ab, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:75V, On Resistance Rds(On):0.0046Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IRFS3307ZTRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 48 |
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$1.4900 / $2.3300 | Buy Now |
DISTI #
IRFS3307ZTRLPBFCT-ND
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DigiKey | MOSFET N-CH 75V 120A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
36921 In Stock |
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$1.4383 / $4.0400 | Buy Now |
DISTI #
IRFS3307ZTRLPBF
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Avnet Americas | Trans MOSFET N-CH 75V 128A 3-Pin D2PAK T/R - Tape and Reel (Alt: IRFS3307ZTRLPBF) RoHS: Compliant Min Qty: 218 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 1600 Partner Stock |
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$1.4300 / $1.6800 | Buy Now |
DISTI #
IRFS3307ZTRLPBF
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Avnet Americas | Trans MOSFET N-CH 75V 128A 3-Pin D2PAK T/R - Tape and Reel (Alt: IRFS3307ZTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$1.0906 | Buy Now |
DISTI #
942-IRFS3307ZTRLPBF
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Mouser Electronics | MOSFETs MOSFT 75V 120A 5.8mOhm 79nC Qg RoHS: Compliant | 1097 |
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$1.4300 / $3.7700 | Buy Now |
DISTI #
70019743
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RS | MOSFET, 75V, 120A, 5.8 MOHM, 79 NC QG, D2-PAK | Infineon IRFS3307ZTRLPBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$2.0900 / $2.6200 | RFQ |
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Future Electronics | Single N-Channel 75 V 5.8 mOhm 79 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks Container: Reel | 0Reel |
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$1.4100 / $1.4600 | Buy Now |
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Future Electronics | Single N-Channel 75 V 5.8 mOhm 79 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks Container: Reel | 0Reel |
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$1.4100 / $1.4600 | Buy Now |
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Rochester Electronics | IRFS3307ZTRLPBF - TRENCH 40<-<100V RoHS: Compliant Status: Active Min Qty: 1 | 800 |
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$1.4300 / $1.6800 | Buy Now |
DISTI #
IRFS3307ZTRLPBF
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TME | Transistor: N-MOSFET, unipolar, 75V, 120A, 230W, D2PAK Min Qty: 800 | 0 |
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$1.7000 | RFQ |
Part Details for IRFS3307ZTRLPBF
IRFS3307ZTRLPBF CAD Models
IRFS3307ZTRLPBF Part Data Attributes
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IRFS3307ZTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFS3307ZTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 140 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0058 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 230 W | |
Pulsed Drain Current-Max (IDM) | 480 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFS3307ZTRLPBF
This table gives cross-reference parts and alternative options found for IRFS3307ZTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS3307ZTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFS3307ZTRRPBF | Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | International Rectifier | IRFS3307ZTRLPBF vs IRFS3307ZTRRPBF |
IRFS3307ZTRRPBF | Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | IRFS3307ZTRLPBF vs IRFS3307ZTRRPBF |
IRFS3307ZPBF | Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | IRFS3307ZTRLPBF vs IRFS3307ZPBF |