Transistors
IRFS4610
Description: Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

Overview of IRFS4610 by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for IRFS4610 by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   100
RFQ
Quest Components   28
  • 1 $10.0200
  • 4 $7.3480
  • 11 $6.6800
$6.6800 / $10.0200 Buy Now

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Part Data Attributes for IRFS4610 by International Rectifier

IRFS4610
International Rectifier
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
D2PAK
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
370 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
73 A
Drain-source On Resistance-Max
0.014 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
225
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
190 W
Pulsed Drain Current-Max (IDM)
290 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRFS4610
    International Rectifier
    Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
    VS

Alternate Parts for IRFS4610

This table gives cross-reference parts and alternative options found for IRFS4610. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS4610, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFS4610TRR Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRFS4610 vs IRFS4610TRR
IRFS4610TRL Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRFS4610 vs IRFS4610TRL
IRFS4610TRRPBF Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRFS4610 vs IRFS4610TRRPBF
Part Number Description Manufacturer Compare
IRFS4610TRL Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRFS4610 vs IRFS4610TRL
RFD16N05LSM9A 16A, 50V, 0.056ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA VARIANT, 3 PIN Rochester Electronics LLC IRFS4610 vs RFD16N05LSM9A
RFD3055LESM9A 11A, 60V, 0.107ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252 VARIANT, 3 PIN Rochester Electronics LLC IRFS4610 vs RFD3055LESM9A
IRFS4710TRLHR Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3/2 International Rectifier IRFS4610 vs IRFS4710TRLHR
RFD16N05SM 16A, 50V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC IRFS4610 vs RFD16N05SM
IRL2505STRR Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRFS4610 vs IRL2505STRR
IRL3705ZS Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRFS4610 vs IRL3705ZS
RFD16N05SM9A_NL 16A, 50V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA VARIANT, 3 PIN Rochester Electronics LLC IRFS4610 vs RFD16N05SM9A_NL
RFD16N05SM_NL 16A, 50V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC IRFS4610 vs RFD16N05SM_NL

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