Part Details for IRFS640 by Samsung Semiconductor
Overview of IRFS640 by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFS640
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | MOSFET Transistor, N-Channel, SOT-186 | 3587 |
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$0.5250 / $1.5000 | Buy Now |
Part Details for IRFS640
IRFS640 CAD Models
IRFS640 Part Data Attributes
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IRFS640
Samsung Semiconductor
Buy Now
Datasheet
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Compare Parts:
IRFS640
Samsung Semiconductor
Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | SFM | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 9.8 A | |
Drain-source On Resistance-Max | 0.18 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 40 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for IRFS640
This table gives cross-reference parts and alternative options found for IRFS640. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS640, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFI640G | Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPAK-3 | Vishay Siliconix | IRFS640 vs IRFI640G |
IRFI640GPBF | Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULLPAK-3 | Vishay Siliconix | IRFS640 vs IRFI640GPBF |
STP19NB20FP | 10A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN | STMicroelectronics | IRFS640 vs STP19NB20FP |
2SK2522-01MR | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, TO-220F, 3 PIN | Fuji Electric Co Ltd | IRFS640 vs 2SK2522-01MR |
BUK445-200A | TRANSISTOR 7.6 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, PLASTIC, FULL PACK-3, FET General Purpose Power | NXP Semiconductors | IRFS640 vs BUK445-200A |
IRF640FI | 10A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | IRFS640 vs IRF640FI |
IRFS541 | Power Field-Effect Transistor, 17A I(D), 80V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRFS640 vs IRFS541 |