Part Details for IRFU120 by Fairchild Semiconductor Corporation
Overview of IRFU120 by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFU120
IRFU120 CAD Models
IRFU120 Part Data Attributes
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IRFU120
Fairchild Semiconductor Corporation
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Datasheet
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IRFU120
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Package Description | IN-LINE, R-PSIP-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 36 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 8.4 A | |
Drain-source On Resistance-Max | 0.27 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 34 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFU120
This table gives cross-reference parts and alternative options found for IRFU120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SIHFU120-E3 | TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3, FET General Purpose Power | Vishay Siliconix | IRFU120 vs SIHFU120-E3 |
IRFU120PBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, | Vishay Intertechnologies | IRFU120 vs IRFU120PBF |
IRFU120 | 8.4A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | Intersil Corporation | IRFU120 vs IRFU120 |
IRFU120 | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | Samsung Semiconductor | IRFU120 vs IRFU120 |
IRFU120 | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | International Rectifier | IRFU120 vs IRFU120 |