Datasheets
IRFU120NPBF by:
Infineon Technologies AG

Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3

Part Details for IRFU120NPBF by Infineon Technologies AG

Results Overview of IRFU120NPBF by Infineon Technologies AG

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IRFU120NPBF Information

IRFU120NPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFU120NPBF

Part # Distributor Description Stock Price Buy
DISTI # 38K2655
Newark Mosfet, N-Ch, 100V, 9.4A, 175Deg C, 48W, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:9.4A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:-Rohs Compliant: Yes |Infineon IRFU120NPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 5024
  • 1 $0.9440
  • 10 $0.5000
  • 100 $0.4770
  • 500 $0.4680
  • 1,000 $0.4380
  • 2,500 $0.4240
  • 12,000 $0.4100
$0.4100 / $0.9440 Buy Now
DISTI # IRFU120NPBF
Avnet Americas Trans MOSFET N-CH 100V 9.4A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU120NPBF) COO: China RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 3,000 $0.2823
  • 6,000 $0.2723
  • 12,000 $0.2632
  • 24,000 $0.2547
  • 48,000 $0.2467
$0.2467 / $0.2823 Buy Now
DISTI # 70017260
RS MOSFET, POWER, N-CH, VDSS 100V, RDS(ON) 0.21OHM, ID 9.4A, I-PAK (TO-251AA),PD 48W Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $1.6500
  • 5 $1.5600
  • 10 $1.4800
  • 100 $1.4000
  • 250 $1.2900
$1.2900 / $1.6500 RFQ
Rochester Electronics IRFU120NPbF - HEXFET N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 54436
  • 100 $0.4021
  • 500 $0.3619
  • 1,000 $0.3337
  • 10,000 $0.2976
  • 100,000 $0.2493
$0.2493 / $0.4021 Buy Now
DISTI # IRFU120NPBF
TME Transistor: N-MOSFET, unipolar, 100V, 9.1A, 39W, IPAK Min Qty: 1 2890
  • 1 $1.0800
  • 10 $0.5590
  • 25 $0.5060
  • 50 $0.4730
  • 75 $0.4540
  • 150 $0.4450
$0.4450 / $1.0800 Buy Now
Ameya Holding Limited Transistor: N-MOSFET, unipolar, 100V, 9.1A, 39W, IPAK 76
RFQ
DISTI # IRFU120NPBF
IBS Electronics MOSFET POWER N-CH VDSS 100V RDS(ON) 0.21 OHM ID 9.4A I-PAK (TO-251AA) PD 48W Min Qty: 3000 Package Multiple: 1 0
  • 300 $0.7490
  • 1,500 $0.7280
  • 3,000 $0.7630
  • 3,000 $0.7140
  • 9,375 $0.6930
$0.6930 / $0.7630 Buy Now
Chip 1 Exchange INSTOCK 7761
RFQ
DISTI # IRFU120NPBF
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Tube 35212
  • 5 $0.7470
  • 10 $0.3470
  • 50 $0.3270
  • 100 $0.3260
  • 200 $0.3250
  • 500 $0.3110
  • 1,000 $0.2850
  • 3,000 $0.2780
  • 6,000 $0.2650
  • 12,000 $0.2550
$0.2550 / $0.7470 Buy Now
DISTI # SP001557678
EBV Elektronik Trans MOSFET NCH 100V 94A 3Pin3Tab IPAK (Alt: SP001557678) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now
LCSC 100V 9.4A 48W 1 N-Channel TO-251(IPAK) Single FETs MOSFETs RoHS 4740
  • 5 $0.4808
  • 50 $0.3821
  • 150 $0.2978
  • 525 $0.2450
  • 2,475 $0.2216
  • 6,000 $0.2075
$0.2075 / $0.4808 Buy Now
DISTI # IRFU120NPBF
Maritex MOSFET Devices, INFINEON, IRFU120NPBF, 100 V, 5.8 A, 20 V, 39 W Min Qty: 1 Package Multiple: 1 117190
  • 1 $0.7140
  • 10 $0.3430
  • 100 $0.3210
  • 500 $0.3050
  • 1,000 $0.2770
  • 9,000 $0.2710
$0.2710 / $0.7140 Buy Now
New Advantage Corporation Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET� Power Mosfet - TO-251AA RoHS: Compliant Min Qty: 1 Package Multiple: 3000 6000
  • 3,000 $0.4833
  • 6,000 $0.4462
$0.4462 / $0.4833 Buy Now

Part Details for IRFU120NPBF

IRFU120NPBF CAD Models

IRFU120NPBF Part Data Attributes

IRFU120NPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFU120NPBF Infineon Technologies AG Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
Rohs Code Yes
Part Life Cycle Code Not Recommended
Reach Compliance Code Not Compliant
ECCN Code EAR99
Additional Feature Avalanche Rated
Avalanche Energy Rating (Eas) 91 Mj
Case Connection Drain
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 9.4 A
Drain-source On Resistance-Max 0.21 Ω
FET Technology Metal-Oxide Semiconductor
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode Enhancement Mode
Operating Temperature-Max 175 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style In-Line
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 38 A
Qualification Status Not Qualified
Surface Mount No
Terminal Finish Matte Tin (Sn) - With Nickel (Ni) Barrier
Terminal Form Through-Hole
Terminal Position Single
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application Switching
Transistor Element Material Silicon

Alternate Parts for IRFU120NPBF

This table gives cross-reference parts and alternative options found for IRFU120NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU120NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFU120N Infineon Technologies AG Check for Price Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3 IRFU120NPBF vs IRFU120N
Part Number Manufacturer Composite Price Description Compare
IRFU120NPBF International Rectifier Check for Price Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 IRFU120NPBF vs IRFU120NPBF
equivalents icon

IRFU120NPBF Related Parts

IRFU120NPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFU120NPBF is -55°C to 175°C.

  • The recommended PCB footprint for the IRFU120NPBF is a 5x6mm pad with a 0.5mm thermal via.

  • Yes, the IRFU120NPBF is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive and industrial systems.

  • The maximum allowed voltage for the IRFU120NPBF is 100V.

  • To ensure proper cooling, a thermal interface material (TIM) should be used between the device and the heat sink, and the heat sink should be designed to provide adequate airflow.

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