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Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFU120NPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
38K2655
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Newark | Mosfet, N-Ch, 100V, 9.4A, 175Deg C, 48W, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:9.4A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:-Rohs Compliant: Yes |Infineon IRFU120NPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 5024 |
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$0.4100 / $0.9440 | Buy Now |
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DISTI #
IRFU120NPBF
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Avnet Americas | Trans MOSFET N-CH 100V 9.4A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU120NPBF) COO: China RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days Container: Tube | 0 |
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$0.2467 / $0.2823 | Buy Now |
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DISTI #
70017260
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RS | MOSFET, POWER, N-CH, VDSS 100V, RDS(ON) 0.21OHM, ID 9.4A, I-PAK (TO-251AA),PD 48W Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$1.2900 / $1.6500 | RFQ |
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Rochester Electronics | IRFU120NPbF - HEXFET N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 54436 |
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$0.2493 / $0.4021 | Buy Now |
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DISTI #
IRFU120NPBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 9.1A, 39W, IPAK Min Qty: 1 | 2890 |
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$0.4450 / $1.0800 | Buy Now |
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Ameya Holding Limited | Transistor: N-MOSFET, unipolar, 100V, 9.1A, 39W, IPAK | 76 |
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RFQ | |
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DISTI #
IRFU120NPBF
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IBS Electronics | MOSFET POWER N-CH VDSS 100V RDS(ON) 0.21 OHM ID 9.4A I-PAK (TO-251AA) PD 48W Min Qty: 3000 Package Multiple: 1 | 0 |
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$0.6930 / $0.7630 | Buy Now |
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Chip 1 Exchange | INSTOCK | 7761 |
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RFQ | |
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DISTI #
IRFU120NPBF
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Tube | 35212 |
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$0.2550 / $0.7470 | Buy Now |
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DISTI #
SP001557678
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EBV Elektronik | Trans MOSFET NCH 100V 94A 3Pin3Tab IPAK (Alt: SP001557678) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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IRFU120NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFU120NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 91 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 9.4 A | |
| Drain-source On Resistance-Max | 0.21 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | In-Line | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 38 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) - With Nickel (Ni) Barrier | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
This table gives cross-reference parts and alternative options found for IRFU120NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU120NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFU120N | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3 | IRFU120NPBF vs IRFU120N |
The maximum operating temperature range for the IRFU120NPBF is -55°C to 175°C.
The recommended PCB footprint for the IRFU120NPBF is a 5x6mm pad with a 0.5mm thermal via.
Yes, the IRFU120NPBF is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive and industrial systems.
The maximum allowed voltage for the IRFU120NPBF is 100V.
To ensure proper cooling, a thermal interface material (TIM) should be used between the device and the heat sink, and the heat sink should be designed to provide adequate airflow.