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Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38K2701
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Newark | Mosfet Transistor, N Channel, 10 A, 60 V, 200 Mohm, 10 V, 4 V Rohs Compliant: Yes |Vishay IRFZ14PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 173 |
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$0.6310 / $1.1200 | Buy Now |
DISTI #
63J7108
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Newark | Mosfet, N Channel, 60V, 10A, To-220Ab-3, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:10A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Msl:- Rohs Compliant: Yes |Vishay IRFZ14PBF RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$0.9130 | Buy Now |
DISTI #
IRFZ14PBF
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Avnet Americas | MOSFET N-CHANNEL 60V - Bulk (Alt: IRFZ14PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks, 0 Days Container: Bulk | 2000 |
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$0.5321 | Buy Now |
DISTI #
844-IRFZ14PBF
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Mouser Electronics | MOSFETs TO220 N CHAN 60V RoHS: Compliant | 7399 |
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$0.4030 / $1.0700 | Buy Now |
DISTI #
70078974
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RS | MOSFET, Power, N-Ch, VDSS 60V, RDS(ON) 0.2Ohm, ID 10A, TO-220AB, PD 43W, VGS+/-20V,-55C | Vishay PCS IRFZ14PBF RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Container: Bulk | 0 |
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$0.9200 / $1.0800 | RFQ |
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Future Electronics | Single N-Channel 60 V 0.2 Ohms Through Hole Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 845Tube |
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$0.3950 / $0.4850 | Buy Now |
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Future Electronics | Single N-Channel 60 V 0.2 Ohms Through Hole Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 7Tube |
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$0.3950 / $0.4850 | Buy Now |
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Bristol Electronics | 2328 |
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RFQ | ||
DISTI #
IRFZ14PBF
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TTI | MOSFETs TO220 N CHAN 60V RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 2100 In Stock |
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$0.4630 / $0.6130 | Buy Now |
DISTI #
IRFZ14PBF
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TME | Transistor: N-MOSFET, unipolar, 60V, 7.2A, 43W, TO220AB Min Qty: 1 | 1066 |
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$0.4780 / $0.8510 | Buy Now |
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IRFZ14PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFZ14PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 47 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 43 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFZ14PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ14PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFZ14PBF | Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix | IRFZ14PBF vs IRFZ14PBF |
IRFZ14 | Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRFZ14PBF vs IRFZ14 |
IRFZ14 | Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IRFZ14PBF vs IRFZ14 |