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Transistors Power Field-Effect Transistors IRFZ24NPBF

Transistors
IRFZ24NPBF
Description: Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Overview of IRFZ24NPBF by International Rectifier

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Price & Stock for IRFZ24NPBF by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   1299
RFQ
Bristol Electronics   70
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-220AB 640
  • 1 $0.6975
  • 144 $0.3488
  • 574 $0.2790
$0.2790 / $0.6975 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 4
  • 1 $0.4185
$0.4185 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant Stock EU - 500
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

CAD Models for IRFZ24NPBF by International Rectifier
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Part Data Attributes for IRFZ24NPBF by International Rectifier
Parametric Data

IRFZ24NPBF
International Rectifier
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
TO-220AB
Package Description
LEAD FREE PACKAGE-3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
71 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
Drain Current-Max (ID)
17 A
Drain-source On Resistance-Max
0.07 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
45 W
Power Dissipation-Max (Abs)
45 W
Pulsed Drain Current-Max (IDM)
68 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFZ24NPBF
    International Rectifier
    Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
    VS

Alternate Parts for IRFZ24NPBF

This table gives cross-reference parts and alternative options found for IRFZ24NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ24NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFZ24N Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRFZ24NPBF vs IRFZ24N
MTP15N05E 15A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN Texas Instruments IRFZ24NPBF vs MTP15N05E
IRFZ24N 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB NXP Semiconductors IRFZ24NPBF vs IRFZ24N
BUZ71 Power Field-Effect Transistor, 56A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, Microsemi Corporation IRFZ24NPBF vs BUZ71
MTP15N05E Power Field-Effect Transistor, 15A I(D), 50V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRFZ24NPBF vs MTP15N05E
BUZ71 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Thomson Consumer Electronics IRFZ24NPBF vs BUZ71
BUK453-60A TRANSISTOR 22 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors IRFZ24NPBF vs BUK453-60A
BUZ71S2 Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens IRFZ24NPBF vs BUZ71S2
IRFZ24N Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRFZ24NPBF vs IRFZ24N
STP20NE06 20A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRFZ24NPBF vs STP20NE06
Part Number Description Manufacturer Compare
HUF75329D3S 20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRFZ24NPBF vs HUF75329D3S
HUFA76423D3S 20A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRFZ24NPBF vs HUFA76423D3S
HUFA75309D3 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation IRFZ24NPBF vs HUFA75309D3
HUFA76429D3 N-Channel Logic Level UltraFET Power MOSFET 60V, 20A, 27mΩ, TO-251 (I-PAK) MOLDED, 3 LEAD OPTION AA, 1800/RAIL Fairchild Semiconductor Corporation IRFZ24NPBF vs HUFA76429D3
PHB21N06LT/T3 TRANSISTOR 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3, FET General Purpose Power NXP Semiconductors IRFZ24NPBF vs PHB21N06LT/T3
HUFA76409D3ST 18A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRFZ24NPBF vs HUFA76409D3ST
HUFA76423D3ST 20A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRFZ24NPBF vs HUFA76423D3ST
HUFA76429D3 20A, 60V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation IRFZ24NPBF vs HUFA76429D3
HUF76429D3 20A, 60V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251AA, 3 PIN Rochester Electronics LLC IRFZ24NPBF vs HUF76429D3
MTD15N06VL 15A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC IRFZ24NPBF vs MTD15N06VL

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