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IRFZ24NSPBF by:

Power Field-Effect Transistor,

Part Details for IRFZ24NSPBF by Infineon Technologies AG

Overview of IRFZ24NSPBF by Infineon Technologies AG

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Part Details for IRFZ24NSPBF

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IRFZ24NSPBF Part Data Attributes:

IRFZ24NSPBF Infineon Technologies AG
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IRFZ24NSPBF Infineon Technologies AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 71 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 65 pF
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 3.8 W
Power Dissipation-Max (Abs) 45 W
Pulsed Drain Current-Max (IDM) 68 A
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFZ24NSPBF

This table gives cross-reference parts and alternative options found for IRFZ24NSPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ24NSPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AUIRFZ24NS Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Infineon Technologies AG IRFZ24NSPBF vs AUIRFZ24NS
AUIRFZ24NSTRR Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG IRFZ24NSPBF vs AUIRFZ24NSTRR
IRFZ24NSTRRPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRFZ24NSPBF vs IRFZ24NSTRRPBF
IRFZ24NSTRL Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRFZ24NSPBF vs IRFZ24NSTRL
Part Number Description Manufacturer Compare
AUIRFZ24NS Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Infineon Technologies AG IRFZ24NSPBF vs AUIRFZ24NS
IRFZ24NSTRRPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRFZ24NSPBF vs IRFZ24NSTRRPBF
FS10VS-06 Power Field-Effect Transistor, 10A I(D), 60V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN Powerex Power Semiconductors IRFZ24NSPBF vs FS10VS-06
BUK463-60A TRANSISTOR 22 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors IRFZ24NSPBF vs BUK463-60A
FS10VS-06 Power Field-Effect Transistor, 10A I(D), 60V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN Mitsubishi Electric IRFZ24NSPBF vs FS10VS-06
AUIRFZ24NSTRR Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG IRFZ24NSPBF vs AUIRFZ24NSTRR
IRFZ24NSTRL Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRFZ24NSPBF vs IRFZ24NSTRL

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