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Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19K8196
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Newark | N Channel Mosfet, 55V, 17A To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:17A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Vishay IRFZ24PBF RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
844-IRFZ24PBF
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Mouser Electronics | MOSFETs TO220 60V 17A N-CH MOSFET RoHS: Compliant | 7633 |
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$0.6580 / $1.3700 | Buy Now |
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Future Electronics | Single N-Channel 60 V 0.1 Ohms Through Hole Power Mosfet RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0Tube |
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$0.5550 / $0.6000 | Buy Now |
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Future Electronics | Single N-Channel 60 V 0.1 Ohms Through Hole Power Mosfet RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0Tube |
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$0.5550 / $0.6000 | Buy Now |
DISTI #
IRFZ24PBF
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TTI | MOSFETs TO220 60V 17A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 1000 In Stock |
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$0.5500 / $1.1200 | Buy Now |
DISTI #
IRFZ24PBF
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TME | Transistor: N-MOSFET, unipolar, 60V, 17A, Idm: 68A, 60W, TO220AB Min Qty: 1 | 751 |
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$0.6020 / $1.2060 | Buy Now |
DISTI #
IRFZ24PBF
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EBV Elektronik | Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab) TO-220AB (Alt: IRFZ24PBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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IRFZ24PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFZ24PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 60 W | |
Pulsed Drain Current-Max (IDM) | 68 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFZ24PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ24PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFZ24 | Power Field-Effect Transistor, 17A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IRFZ24PBF vs IRFZ24 |
IRFZ24FPBF | 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Infineon Technologies AG | IRFZ24PBF vs IRFZ24FPBF |
IRFZ24 | Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Intertechnologies | IRFZ24PBF vs IRFZ24 |
IRFZ24FPBF | Power Field-Effect Transistor, 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRFZ24PBF vs IRFZ24FPBF |
IRFZ24FX | Power Field-Effect Transistor, 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Infineon Technologies AG | IRFZ24PBF vs IRFZ24FX |
IRFZ24F | Power Field-Effect Transistor, 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRFZ24PBF vs IRFZ24F |
IRFZ24 | TRANSISTOR 17 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN, FET General Purpose Power | Vishay Siliconix | IRFZ24PBF vs IRFZ24 |
IRFZ24FX | Power Field-Effect Transistor, 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRFZ24PBF vs IRFZ24FX |
IRFZ24FXPBF | 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Infineon Technologies AG | IRFZ24PBF vs IRFZ24FXPBF |