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Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J7145
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Newark | N Channel Mosfet, 55V, 53A To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:53A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRFZ46NPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 39 |
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$0.4980 / $0.9360 | Buy Now |
DISTI #
IRFZ46NPBF-ND
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DigiKey | MOSFET N-CH 55V 53A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
24806 In Stock |
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$0.4791 / $1.4900 | Buy Now |
DISTI #
IRFZ46NPBF
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Avnet Americas | Trans MOSFET N-CH 55V 53A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFZ46NPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tube | 190 |
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$0.4704 | Buy Now |
DISTI #
IRFZ46NPBF
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Avnet Americas | Trans MOSFET N-CH 55V 53A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFZ46NPBF) RoHS: Compliant Min Qty: 653 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 3737 Partner Stock |
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$0.4868 / $0.5481 | Buy Now |
DISTI #
63J7145
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Avnet Americas | Trans MOSFET N-CH 55V 53A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7145) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 0 Days Container: Bulk | 39 Partner Stock |
|
$0.4980 / $0.9360 | Buy Now |
DISTI #
942-IRFZ46NPBF
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Mouser Electronics | MOSFETs MOSFT 55V 46A 16.5mOhm 48nC RoHS: Compliant | 1155 |
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$0.4790 / $1.0700 | Buy Now |
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Future Electronics | Single N-Channel 55 V 16.5 mOhm 72 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 10 Weeks Container: Tube | 0Tube |
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$0.4700 / $0.5600 | Buy Now |
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Future Electronics | Single N-Channel 55 V 16.5 mOhm 72 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 10 Weeks Container: Tube | 0Tube |
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$0.4700 / $0.5600 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant |
763 Partner Stock |
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$0.5600 / $0.6500 | Buy Now |
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Rochester Electronics | IRFZ46 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 203 |
|
$0.4752 / $0.5590 | Buy Now |
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IRFZ46NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFZ46NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | TO-220AB, 3 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 152 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 39 A | |
Drain-source On Resistance-Max | 0.0165 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 88 W | |
Power Dissipation-Max (Abs) | 107 W | |
Pulsed Drain Current-Max (IDM) | 180 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFZ46NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ46NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFZ46N | Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRFZ46NPBF vs IRFZ46N |