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Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AC1765
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Newark | Mosfet, N-Ch, 55V, 64A, To-263Ab, Transistor Polarity:N Channel, Continuous Drain Current Id:64A, Drain Source Voltage Vds:55V, On Resistance Rds(On):0.014Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipationrohs Compliant: Yes |Infineon IRFZ48NSTRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3564 |
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$0.6920 / $1.4700 | Buy Now |
DISTI #
IRFZ48NSTRLPBFCT-ND
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DigiKey | MOSFET N-CH 55V 64A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
30255 In Stock |
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$0.6461 / $2.2500 | Buy Now |
DISTI #
IRFZ48NSTRLPBF
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Avnet Americas | Trans MOSFET N-CH 55V 64A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFZ48NSTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 3200 |
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$0.4886 | Buy Now |
DISTI #
942-IRFZ48NSTRLPBF
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Mouser Electronics | MOSFETs MOSFT 55V 64A 14mOhm 54nC RoHS: Compliant | 32349 |
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$0.6280 / $1.3900 | Buy Now |
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Future Electronics | Single N-Channel 55V 14 mOhm 81 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks Container: Reel | 800Reel |
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$0.6150 / $0.6800 | Buy Now |
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Future Electronics | Single N-Channel 55V 14 mOhm 81 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks Container: Reel | 0Reel |
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$0.6150 / $0.6650 | Buy Now |
DISTI #
IRFZ48NSTRLPBF
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TME | Transistor: N-MOSFET, unipolar, 55V, 64A, 140W, D2PAK Min Qty: 800 | 0 |
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$0.7600 | RFQ |
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Ameya Holding Limited | Single N-Channel 55V 14 mOhm 81 nC HEXFET® Power Mosfet - D2PAK | 3729 |
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RFQ | |
DISTI #
C1S322000497621
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Chip1Stop | Trans MOSFET N-CH Si 55V 64A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 16800 |
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$0.3440 / $0.3930 | Buy Now |
DISTI #
C1S322000497612
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Chip1Stop | Trans MOSFET N-CH Si 55V 64A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant Container: Cut Tape | 2650 |
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$0.5400 / $0.6490 | Buy Now |
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IRFZ48NSTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFZ48NSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 190 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 64 A | |
Drain-source On Resistance-Max | 0.014 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 210 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFZ48NSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ48NSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFZ48NS | Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRFZ48NSTRLPBF vs IRFZ48NS |
IRFZ48NSPBF | Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRFZ48NSTRLPBF vs IRFZ48NSPBF |
IRFZ48NS | Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRFZ48NSTRLPBF vs IRFZ48NS |
IRFZ48NSTRRPBF | Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRFZ48NSTRLPBF vs IRFZ48NSTRRPBF |