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Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRG4PC50UPBF by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
70017076
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RS | 600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
|
$9.6900 / $12.1100 | RFQ |
|
|
Chip Stock | TransIGBTChipN-CH600V55A200000mW3-Pin(3+Tab)TO-247ACTube | 2668 |
|
RFQ | |
|
|
Win Source Electronics | IGBT 600V 55A 200W TO247AC | 1090 |
|
$109.0909 / $125.8741 | Buy Now |
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IRG4PC50UPBF
Infineon Technologies AG
Buy Now
Datasheet
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IRG4PC50UPBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Case Connection | Collector | |
| Collector Current-Max (IC) | 55 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | Single | |
| Fall Time-Max (tf) | 130 Ns | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 200 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin Over Nickel | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Power Control | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 390 Ns | |
| Turn-off Time-Nom (toff) | 258 Ns | |
| Turn-on Time-Nom (ton) | 52 Ns | |
| VCEsat-Max | 2 V |
This table gives cross-reference parts and alternative options found for IRG4PC50UPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PC50UPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRG4PC50UPBF | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | IRG4PC50UPBF vs IRG4PC50UPBF |
The maximum junction temperature that the IRG4PC50UPBF can withstand is 175°C.
To ensure reliability, it is recommended to operate the IRG4PC50UPBF within the specified temperature range, use a suitable heat sink, and ensure good thermal conductivity between the device and the heat sink.
The recommended gate resistance for the IRG4PC50UPBF is between 10 ohms and 100 ohms to ensure proper switching performance.
Yes, the IRG4PC50UPBF is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses and thermal performance.
To protect the IRG4PC50UPBF from ESD, it is recommended to handle the device in an ESD-protected environment, use ESD-protective packaging, and follow proper handling and storage procedures.