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Part Details for IRG4PC50UPBF by Infineon Technologies AG
Overview of IRG4PC50UPBF by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for IRG4PC50UPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J7530
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Newark | Single Igbt, 600V, 55A, Dc Collector Current:55A, Collector Emitter Saturation Voltage Vce(On):2.4V, Power Dissipation Pd:200W, Collector Emitter Voltage V(Br)Ceo:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C, Msl:- Rohs Compliant: Yes |Infineon IRG4PC50UPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for IRG4PC50UPBF
IRG4PC50UPBF CAD Models
IRG4PC50UPBF Part Data Attributes:
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IRG4PC50UPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRG4PC50UPBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 55 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 130 ns | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 390 ns | |
| Turn-off Time-Nom (toff) | 258 ns | |
| Turn-on Time-Nom (ton) | 52 ns | |
| VCEsat-Max | 2 V |
Alternate Parts for IRG4PC50UPBF
This table gives cross-reference parts and alternative options found for IRG4PC50UPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PC50UPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRG4PC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | IRG4PC50UPBF vs IRG4PC50U |
| IRG4PC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | International Rectifier | IRG4PC50UPBF vs IRG4PC50U |
| IRG4PC50UPBF | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | IRG4PC50UPBF vs IRG4PC50UPBF |