Datasheets
IRGR4045DPBF by:

Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2

Part Details for IRGR4045DPBF by Infineon Technologies AG

Overview of IRGR4045DPBF by Infineon Technologies AG

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Price & Stock for IRGR4045DPBF

Part # Distributor Description Stock Price Buy
DISTI # IRGR4045DPBF
Avnet Americas Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) DPAK - Rail/Tube (Alt: IRGR4045DPBF) RoHS: Compliant Min Qty: 410 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 374 Partner Stock
  • 410 $0.8724
  • 420 $0.8602
  • 830 $0.8541
  • 2,100 $0.8297
  • 4,100 $0.8114
  • 21,000 $0.7870
  • 41,000 $0.7748
$0.7748 / $0.8724 Buy Now
Rochester Electronics IRGR4045 - Discrete IGBT with Anti-Parallel Diode ' RoHS: Compliant Status: Obsolete Min Qty: 1 374
  • 1 $0.8897
  • 25 $0.8719
  • 100 $0.8363
  • 500 $0.8007
  • 1,000 $0.7562
$0.7562 / $0.8897 Buy Now

Part Details for IRGR4045DPBF

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IRGR4045DPBF Part Data Attributes

IRGR4045DPBF Infineon Technologies AG
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IRGR4045DPBF Infineon Technologies AG Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ROHS COMPLIANT, PLASTIC, DPAK-3/2
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 12 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 22 ns
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 77 W
Rise Time-Max (tr) 15 ns
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 127 ns
Turn-on Time-Nom (ton) 38 ns

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