Part Details for IRHM7150PBF by International Rectifier
Overview of IRHM7150PBF by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRHM7150PBF
IRHM7150PBF CAD Models
IRHM7150PBF Part Data Attributes
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IRHM7150PBF
International Rectifier
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Datasheet
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IRHM7150PBF
International Rectifier
Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-254AA | |
Package Description | FLANGE MOUNT, S-MSFM-P3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | RADIATION HARDENED | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 34 A | |
Drain-source On Resistance-Max | 0.076 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-254AA | |
JESD-30 Code | S-MSFM-P3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 150 W | |
Pulsed Drain Current-Max (IDM) | 136 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 300 ns | |
Turn-on Time-Max (ton) | 235 ns |
Alternate Parts for IRHM7150PBF
This table gives cross-reference parts and alternative options found for IRHM7150PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHM7150PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N7268 | Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | IRHM7150PBF vs 2N7268 |
JANTXVH2N7268 | Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Infineon Technologies AG | IRHM7150PBF vs JANTXVH2N7268 |
IRHM7150 | Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | International Rectifier | IRHM7150PBF vs IRHM7150 |
IRHM7150 | Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Infineon Technologies AG | IRHM7150PBF vs IRHM7150 |
JANSH2N7268 | Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Infineon Technologies AG | IRHM7150PBF vs JANSH2N7268 |
2N7268 | Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | International Rectifier | IRHM7150PBF vs 2N7268 |
JANSR2N7268 | Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Infineon Technologies AG | IRHM7150PBF vs JANSR2N7268 |
JANSF2N7268 | Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | International Rectifier | IRHM7150PBF vs JANSF2N7268 |
IRHM8150 | Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Infineon Technologies AG | IRHM7150PBF vs IRHM8150 |
JANSG2N7268 | Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Infineon Technologies AG | IRHM7150PBF vs JANSG2N7268 |