Datasheets
IRHM7360SEU by:

Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for IRHM7360SEU by Infineon Technologies AG

Overview of IRHM7360SEU by Infineon Technologies AG

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Part Details for IRHM7360SEU

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IRHM7360SEU Part Data Attributes:

IRHM7360SEU Infineon Technologies AG
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IRHM7360SEU Infineon Technologies AG Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY, RADIATION HARDENED
Avalanche Energy Rating (Eas) 500 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.21 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-MSFM-P3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape SQUARE
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 88 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRHM7360SEU

This table gives cross-reference parts and alternative options found for IRHM7360SEU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHM7360SEU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRHM7360SEUPBF Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRHM7360SEU vs IRHM7360SEUPBF
IRHM7360SEU Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRHM7360SEU vs IRHM7360SEU
Part Number Description Manufacturer Compare
IRHM7360SEU Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRHM7360SEU vs IRHM7360SEU
IRHM7360SEUPBF Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRHM7360SEU vs IRHM7360SEUPBF

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