Part Details for IRL2910STRLPBF by Infineon Technologies AG
Results Overview of IRL2910STRLPBF by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (3 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRL2910STRLPBF Information
IRL2910STRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRL2910STRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2803425
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element14 Asia-Pacific | , MOSFET, N, 100V, 55A, TO-263-3 COO: CN RoHS: Compliant Min Qty: 1 Container: Cut Tape | 105 |
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$1.2500 / $3.7800 | Buy Now |
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DISTI #
2803425RL
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element14 Asia-Pacific | , MOSFET, N, 100V, 55A, TO-263-3 COO: CN RoHS: Compliant Min Qty: 100 Container: Reel | 105 |
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$1.2500 / $1.8800 | Buy Now |
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DISTI #
IRL2910STRLPBF
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Avnet Americas | Power MOSFET, N Channel, 100 V, 55 A, 0.026 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: IRL2910STRLPBF) COO: China RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$0.9912 / $1.1340 | Buy Now |
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DISTI #
70019818
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RS | IRL2910STRLPBF N-CHANNEL MOSFET TRANSISTOR, 55 A, 100 V, 3-PIN D2PAK Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$3.8400 / $4.5300 | RFQ |
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Bristol Electronics | Min Qty: 3 | 59 |
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$1.5000 / $2.4000 | Buy Now |
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DISTI #
IRL2910STRLPBF
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IBS Electronics | SINGLE N-CHANNEL 100 V 0.026 OHM 140 NC HEXFET®, POWER MOSFET - D2PAK Min Qty: 800 Package Multiple: 1 | 800 |
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$1.5680 / $1.6100 | Buy Now |
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DISTI #
IRL2910STRLPBF
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 771 |
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$0.8570 / $3.6200 | Buy Now |
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Chip Stock | SingleN-Channel100V0.026Ohm140nCHEXFET®PowerMosfet-D2PAK | 3730 |
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RFQ | |
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DISTI #
SP001571800
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EBV Elektronik | Power MOSFET N Channel 100 V 55 A 0026 ohm TO263 D2PAK Surface Mount (Alt: SP001571800) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 100V 55A 1 N-Channel D2PAK Single FETs MOSFETs RoHS | 35 |
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$1.7585 / $2.8821 | Buy Now |
Part Details for IRL2910STRLPBF
IRL2910STRLPBF CAD Models
IRL2910STRLPBF Part Data Attributes
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IRL2910STRLPBF
Infineon Technologies AG
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Datasheet
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IRL2910STRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 520 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 330 Pf | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation Ambient-Max | 3.8 W | |
| Power Dissipation-Max (Abs) | 200 W | |
| Pulsed Drain Current-Max (IDM) | 190 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - With Nickel (Ni) Barrier | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for IRL2910STRLPBF
This table gives cross-reference parts and alternative options found for IRL2910STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL2910STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRL2910STRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRL2910STRLPBF vs IRL2910STRRPBF |
| IRL2910S | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | IRL2910STRLPBF vs IRL2910S |
| IRL2910STRRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRL2910STRLPBF vs IRL2910STRRPBF |
IRL2910STRLPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRL2910STRLPBF is -55°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.
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The recommended gate drive voltage for the IRL2910STRLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the IRL2910STRLPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a conductive container or bag.
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The maximum allowable current for the IRL2910STRLPBF is 20A, with a maximum pulsed current of 40A.