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Transistors Power Field-Effect Transistors IRL3705NPBF

IRL3705NPBF
Description: Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Overview of IRL3705NPBF by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 16 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRL3705NPBF by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 38K3057
Newark Mosfet, N-Ch, 55V, 77A, 175Deg C, 130W, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:77A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon IRL3705NPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $1.7200
  • 10 $1.5100
  • 100 $1.2500
  • 500 $1.0600
  • 1,000 $0.9120
  • 2,500 $0.8660
  • 5,000 $0.8340
$0.8340 / $1.7200 Buy Now
DISTI # IRL3705NPBF-ND
DigiKey MOSFET N-CH 55V 89A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube 557
In Stock
  • 1 $2.5700
  • 10 $1.6570
  • 100 $1.1376
  • 500 $0.9148
  • 1,000 $0.8431
  • 2,000 $0.7827
  • 5,000 $0.7760
$0.7760 / $2.5700 Buy Now
DISTI # IRL3705NPBF
Avnet Americas Trans MOSFET N-CH 55V 89A 3-Pin(3+Tab) TO-220AB T/R - Rail/Tube (Alt: IRL3705NPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 10 Weeks, 0 Days Container: Tube 0
  • 1,000 $0.5383
$0.5383 Buy Now
DISTI # 942-IRL3705NPBF
Mouser Electronics MOSFETs MOSFT 55V 77A 65.3nC 10mOhm LogLvAB RoHS: Compliant 772
  • 1 $1.9500
  • 10 $1.5600
  • 100 $1.1400
  • 500 $0.9200
  • 1,000 $0.8510
  • 2,000 $0.7900
  • 5,000 $0.7760
$0.7760 / $1.9500 Buy Now
DISTI # 70017090
RS MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.01Ohm, ID 89A, TO-220AB, PD 170W, VGS +/-16V | Infineon IRL3705NPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $2.1700
  • 5 $2.0700
  • 10 $1.9500
  • 100 $1.8300
  • 250 $1.7300
$1.7300 / $2.1700 RFQ
Future Electronics Single N-Channel 55 V 0.012 Ohm 98 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks Container: Tube 4000
Tube
  • 50 $0.6100
  • 200 $0.5850
  • 1,000 $0.5550
  • 2,000 $0.5400
  • 6,250 $0.5100
$0.5100 / $0.6100 Buy Now
Future Electronics Single N-Channel 55 V 0.012 Ohm 98 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks Container: Tube 1350
Tube
  • 50 $0.9050
  • 200 $0.8650
  • 750 $0.8300
  • 2,000 $0.8000
  • 5,000 $0.7600
$0.7600 / $0.9050 Buy Now
DISTI # 66920091
Verical Trans MOSFET N-CH 55V 89A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 11 Package Multiple: 1 Date Code: 2224 Americas - 3278
  • 11 $0.8707
  • 100 $0.7779
  • 250 $0.7701
  • 500 $0.7040
  • 1,000 $0.5227
$0.5227 / $0.8707 Buy Now
DISTI # 71240632
Verical Trans MOSFET N-CH 55V 89A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 37 Package Multiple: 1 Date Code: 2333 Americas - 1170
  • 37 $0.8450
  • 50 $0.8425
  • 100 $0.8413
  • 200 $0.8300
  • 500 $0.8288
  • 1,000 $0.8263
$0.8263 / $0.8450 Buy Now
DISTI # IRL3705NPBF
TME Transistor: N-MOSFET, unipolar, 55V, 89A, 130W, TO220AB Min Qty: 1 1327
  • 1 $1.6200
  • 50 $1.0400
  • 100 $0.9800
  • 250 $0.9200
  • 500 $0.8600
  • 1,000 $0.8000
  • 2,000 $0.7600
$0.7600 / $1.6200 Buy Now
Velocity Electronics Our Stock 3900
RFQ
DISTI # C1S322000501410
Chip1Stop Trans MOSFET N-CH 55V 89A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Container: Tube 1170
  • 1 $0.6770
  • 10 $0.6760
  • 50 $0.6740
  • 100 $0.6730
  • 200 $0.6640
  • 500 $0.6630
  • 1,000 $0.6610
$0.6610 / $0.6770 Buy Now
DISTI # C1S322000635993
Chip1Stop Trans MOSFET N-CH 55V 89A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant 1
  • 1 $1.2300
$1.2300 Buy Now
DISTI # SP001578520
EBV Elektronik Trans MOSFET N-CH 55V 89A 3-Pin(3+Tab) TO-220AB T/R (Alt: SP001578520) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 11 Weeks, 0 Days EBV - 319000
Buy Now
New Advantage Corporation Single N-Channel 55 V 0.012 Ohm 98 nC HEXFET� Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 50 4250
  • 200 $0.8786
  • 4,250 $0.8200
$0.8200 / $0.8786 Buy Now
Win Source Electronics Trans IGBT Chip N-CH 1200V 78A 350000mW 3-Pin(3+Tab) TO-274AA Tube / MOSFET N-CH 55V 89A TO-220AB 42000
  • 40 $1.4130
  • 90 $1.1600
  • 135 $1.1240
  • 185 $1.0870
  • 240 $1.0510
  • 320 $0.9420
$0.9420 / $1.4130 Buy Now

CAD Models for IRL3705NPBF by Infineon Technologies AG
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Part Data Attributes for IRL3705NPBF by Infineon Technologies AG
Parametric Data

IRL3705NPBF
Infineon Technologies AG
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Factory Lead Time
10 Weeks
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
Avalanche Energy Rating (Eas)
340 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
Drain Current-Max (ID)
89 A
Drain-source On Resistance-Max
0.012 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
130 W
Pulsed Drain Current-Max (IDM)
310 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Matte Tin (Sn)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRL3705NPBF
    Infineon Technologies AG
    Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
    VS

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